Yang Tie, Cheng Zhenxiang, Wang Xiaotian, Wang Xiao-Lin
School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2500, Australia.
J Adv Res. 2020 Jun 23;28:43-49. doi: 10.1016/j.jare.2020.06.016. eCollection 2021 Feb.
Spin gapless semiconductors (SGSs) and nodal ring states (NRSs) have aroused great scientific interest in recent years due to their unique electronic properties and high application potential in the field of spintronics and magnetoelectronics.
Since their advent, all SGSs and NRSs have been predicted in independent materials. In this work, we proposed a novel type of material, nodal ring spin gapless semiconductor (NRSGS), which combines both states of the SGSs and NRSs.
The synthesized material MgVO has been detailed with band structure analysis based on first principle calculations.
Obtained results revealed that there are gapless crossings in the spin-up direction, which are from multiple topological nodal rings located exactly at the Fermi energy level. MgVO combines the advantages inherited from both NRSs and SGSs in terms of the innumerable gapless points along multiple nodal rings with all linear dispersions and direct contacts. In addition, MgVO also shows strong robustness against both the spin orbit coupling effect and strain conditions.
For the first time, we propose the concept of an NRSGS, and the first such material candidate Mg2VO4 can immediately advance corresponding experimental measurements and even facilitate real applications.
自旋无隙半导体（SGSs）和节环态（NRSs）近年来因其独特的电子特性以及在自旋电子学和磁电子学领域的高应用潜力而引起了极大的科学兴趣。
自出现以来，所有的SGSs和NRSs都是在独立的材料中被预测出来的。在这项工作中，我们提出了一种新型材料，即节环自旋无隙半导体（NRSGS），它结合了SGSs和NRSs的两种状态。
基于第一性原理计算，对合成材料MgVO进行了能带结构分析。
所得结果表明，在自旋向上的方向上存在无隙交叉，这些交叉来自恰好位于费米能级的多个拓扑节环。MgVO在沿着多个节环的无数无隙点方面结合了从NRSs和SGSs继承的优势，所有这些无隙点都具有线性色散和直接接触。此外，MgVO在自旋轨道耦合效应和应变条件方面也表现出很强的稳健性。
我们首次提出了NRSGS的概念，首个此类候选材料Mg2VO4能够立即推动相应的实验测量，甚至促进实际应用。
