Wen Zheng, Wu Di
College of Physics and Center for Marine Observation and Communications, Qingdao University, Qingdao, 266071, China.
Collaborative Innovation Center for Advanced Materials, Nanjing University, Nanjing, 210093, China.
Adv Mater. 2020 Jul;32(27):e1904123. doi: 10.1002/adma.201904123. Epub 2019 Oct 3.
Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in next-generation memories, owing to attractive advantages such as high-density of data storage, nondestructive readout, fast write/read access, and low energy consumption. Herein, recent progress regarding FTJ devices is reviewed with an emphasis on the modulation of the potential barrier. Electronic and ionic approaches that modulate the ferroelectric barriers themselves and/or induce extra barriers in electrodes or at ferroelectric/electrode interfaces are discussed with the enhancement of memory performance. Emerging physics, such as nanoscale ferroelectricity, resonant tunneling, and interfacial metallization, and the applications of FTJs in nonvolatile data storage, neuromorphic synapse emulation, and electromagnetic multistate memory are summarized. Finally, challenges and perspectives of FTJ devices are underlined.
近年来，铁电隧道结（FTJ）因其在下一代存储器中的潜在应用而备受关注，这得益于其诸如高密度数据存储、非破坏性读出、快速写入/读取访问以及低能耗等诱人优势。本文综述了FTJ器件的最新进展，重点在于势垒调制。讨论了通过电子和离子方法来调制铁电势垒本身和/或在电极中或铁电体/电极界面处诱导额外势垒，以提高存储性能。总结了诸如纳米级铁电性、共振隧穿和界面金属化等新兴物理学，以及FTJ在非易失性数据存储、神经形态突触仿真和电磁多态存储器中的应用。最后，强调了FTJ器件面临的挑战和前景。
