Feng Guangdi, Zhu Qiuxiang, Liu Xuefeng, Chen Luqiu, Zhao Xiaoming, Liu Jianquan, Xiong Shaobing, Shan Kexiang, Yang Zhenzhong, Bao Qinye, Yue Fangyu, Peng Hui, Huang Rong, Tang Xiaodong, Jiang Jie, Tang Wei, Guo Xiaojun, Wang Jianlu, Jiang Anquan, Dkhil Brahim, Tian Bobo, Chu Junhao, Duan Chungang
Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China.
Zhejiang Lab, Hangzhou, 310000, China.
Nat Commun. 2024 Jan 13;15(1):513. doi: 10.1038/s41467-024-44759-5.
Among today's nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms. Here, a two-terminal ferroelectric fin diode (FFD) in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes is designed. Such a device not only shows both digital and analog memory functionalities but is also robust and universal as it works using two very different ferroelectric materials. When compared to all current nonvolatile memories, it cumulatively demonstrates an endurance up to 10 cycles, an ON/OFF ratio of ~10, a feature size of 30 nm, an operating energy of ~20 fJ and an operation speed of 100 ns. Beyond these superior performances, the simple two-terminal structure and their self-rectifying ratio of ~ 10 permit to consider them as new electronic building blocks for designing passive crossbar arrays which are crucial for the future in-memory computing.
在当今的非易失性存储器中，基于铁电的电容器、隧道结和场效应晶体管（FET）已经在工业上得到集成和/或深入研究，以提高其性能。与此同时，由于人工智能和大数据问题的巨大发展，迫切需要实现高密度交叉阵列，这是未来存储器和新兴计算算法的先决条件。在此，设计了一种两端铁电鳍式二极管（FFD），其中铁电电容器和鳍状半导体沟道相结合，共享顶部和底部电极。这种器件不仅具有数字和模拟存储功能，而且还具有鲁棒性和通用性，因为它使用两种非常不同的铁电材料工作。与目前所有的非易失性存储器相比，它累计展示了高达10次循环的耐久性、10的开/关比、30nm的特征尺寸、20fJ的工作能量和100ns的运行速度。除了这些卓越的性能外，简单的两端结构及其~10的自整流比使得它们可被视为用于设计无源交叉阵列的新型电子构建块，这对于未来的内存计算至关重要。
