Institute of Information and Communication Technologies, Electronics and Applied Mathematics , Université catholique de Louvain , 1348 Louvain-la-Neuve , Belgium.
Interface and Complex Fluids Laboratory , Université de Mons , 7000 Mons , Belgium.
Nano Lett. 2019 Nov 13;19(11):7681-7690. doi: 10.1021/acs.nanolett.9b02568. Epub 2019 Oct 15.
We report on metal-assisted chemical etching of Si for the synthesis of mechanically stable, hybrid crystallographic orientation Si superstructures with high aspect ratio, above 200. This method sustains high etching rates and facilitates reproducible results. The protocol enables the control of the number, angle, and location of the kinks via successive etch-quench sequences. We analyzed relevant Au mask catalyst features to systematically assess their impact on a wide spectrum of etched morphologies that can be easily attained and customized by fine-tuning of the critical etching parameters. For instance, the designed kinked Si nanowires can be incorporated in biological cells without affecting their viability. An accessible numerical model is provided to explain the etch profiles and the physicochemical events at the Si/Au-electrolyte interface and offers guidelines for the development of finite-element modeling of metal-assisted Si chemical etching.
我们报告了一种用于合成具有高纵横比（超过 200）的机械稳定、混合晶体取向硅超结构的金属辅助化学蚀刻方法。该方法支持高蚀刻速率并促进可重复的结果。该方案通过连续的蚀刻-淬火序列来控制扭结的数量、角度和位置。我们分析了相关的 Au 掩模催化剂特征，以系统地评估它们对广泛的蚀刻形态的影响，这些形态可以通过精细调整关键蚀刻参数来轻松获得和定制。例如，设计的弯曲硅纳米线可以被整合到生物细胞中而不影响它们的生存能力。提供了一个可访问的数值模型来解释 Si/Au-电解质界面的蚀刻轮廓和物理化学事件，并为金属辅助硅化学蚀刻的有限元建模的发展提供了指导。
