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用于高效稳定纯蓝光发光二极管的均匀 ZnSeTeS 量子点

Homogeneous ZnSeTeS quantum dots for efficient and stable pure-blue LEDs.

作者信息

Wu Qianqian, Cao Fan, Yu Wenke, Wang Sheng, Hou Wenjun, Lu Zizhe, Cao Weiran, Zhang Jiaqi, Zhang Xiaoyu, Yang Yingguo, Jia Guohua, Zhang Jianhua, Yang Xuyong

机构信息

Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai, People's Republic of China.

TCL Research, Shenzhen, People's Republic of China.

出版信息

Nature. 2025 Mar;639(8055):633-638. doi: 10.1038/s41586-025-08645-4. Epub 2025 Mar 5.

DOI:10.1038/s41586-025-08645-4
PMID:40044864
Abstract

The electroluminescence performance of heavy-metal-free blue quantum dot (QD) light-emitting diodes (QLEDs) is much lower than that of state-of-the-art cadmium-based counterparts. Ecofriendly ZnSeTe QDs are an ideal alternative to cadmium-based blue QDs, but face issues with colour impurity and inferior stability caused by the aggregated tellurium (Te) that dominates compositional inhomogeneity. Here we developed an isoelectronic control strategy using congeneric sulfur coordinated with triphenyl phosphite (TPP-S) to construct homogeneous ZnSeTeS QDs with pure-blue emissions and near-unity photoluminescence quantum yield. TPP with low electron-donating capability promotes the reactivity balance among anionic precursors, favouring the growth of QDs with uniform composition. The acceptor-like S with high electronegativity weakens the hole localization of the Te atoms by interfering with their surrounding carriers, thereby suppressing the formation of Te isoelectronic centres. Furthermore, the congeneric S increases the configurational entropy of the QDs and eliminates the stacking faults and oxygen defects, leading to improved structural stability and reduced non-radiative carrier density. Consequently, the resulting pure-blue QLEDs based on core-shell ZnSeTeS/ZnSe/ZnS QDs emitting at 460 nm show a high external quantum efficiency of 24.7%, a narrow linewidth of 17 nm, and long operational half-lifetime (T) close to 30,000 hours at 100 cd cm, rivalling state-of-the-art cadmium-based blue QLEDs.

摘要

无重金属蓝色量子点(QD)发光二极管(QLED)的电致发光性能远低于最先进的镉基同类产品。环保型ZnSeTe量子点是镉基蓝色量子点的理想替代品,但由于占主导地位的碲(Te)聚集导致颜色杂质和稳定性较差等问题。在此,我们开发了一种等电子控制策略,使用与亚磷酸三苯酯配位的同属硫(TPP-S)来构建具有纯蓝色发射和接近单位光致发光量子产率的均匀ZnSeTeS量子点。具有低给电子能力的TPP促进了阴离子前驱体之间的反应活性平衡,有利于组成均匀的量子点生长。具有高电负性的类受体S通过干扰Te原子周围的载流子来削弱Te原子的空穴定位,从而抑制Te等电子中心的形成。此外,同属S增加了量子点的构型熵,消除了堆垛层错和氧缺陷,导致结构稳定性提高和非辐射载流子密度降低。因此,基于在460nm处发射的核壳ZnSeTeS/ZnSe/ZnS量子点的所得纯蓝色QLED在100cd cm下显示出24.7%的高外量子效率、17nm的窄线宽和接近30000小时的长工作半衰期(T),可与最先进的镉基蓝色QLED相媲美。

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