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基于σGGA + U方法的PrNiBi半赫斯勒体系的电子结构

Electronic structure of the PrNiBi half-Heusler system based on the σGGA + U method.

作者信息

Mikaeilzadeh L, Tavana A, Khoeini F

机构信息

Department of Physics, University of Zanjan, Zanjan, 45195-313, Iran.

AMDM Lab., Department of Physics, University of Mohaghegh Ardabili, Ardabil, 179, Iran.

出版信息

Sci Rep. 2019 Dec 27;9(1):20075. doi: 10.1038/s41598-019-56537-1.

Abstract

In this works, we study the electronic structure and magnetic properties of the Pr-Ni-Bi half-Heusler systems based on density functional theory. We use the σ GGA + U scheme to consider the effects of on-site electron-electron interactions. Results show that in contrast to the rough estimation of the total magnetic moment of the unit cell, based on the Slater-Pauling behavior in the half-Heusler systems, this system has an antiferromagnetic ground state because of the localized Pr-f electrons. By increasing the magnitude of the effective U parameter, band-inversion occurs in the band structure of this system, which shows the possibility of topological state occurrence.

摘要

在这项工作中,我们基于密度泛函理论研究了Pr-Ni-Bi半赫斯勒体系的电子结构和磁性。我们使用σ广义梯度近似(GGA)+U方案来考虑在位电子-电子相互作用的影响。结果表明,与基于半赫斯勒体系中斯莱特-泡利行为对单胞总磁矩的粗略估计相反,由于Pr-f电子的局域化,该体系具有反铁磁基态。通过增加有效U参数的大小,该体系的能带结构中发生能带反转,这表明出现拓扑态的可能性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3450/6934805/2d40e06e2222/41598_2019_56537_Fig1_HTML.jpg

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