Mondal Chiranjit, Barman C K, Kumar Sourabh, Alam Aftab, Pathak Biswarup
Discipline of Metallurgy Engineering and Materials Science, IIT Indore, Simrol, Indore, 453552, India.
Department of Physics, Indian Institute of Technology, Bombay, Powai, Mumbai, 400076, India.
Sci Rep. 2019 Jan 24;9(1):527. doi: 10.1038/s41598-018-36869-0.
In this article, we predict the emergence of non-trivial band topology in the family of XX'Bi compounds having [Formula: see text] (# 189) space group. Using first principles calculations within hybrid functional framework, we demonstrate that NaSrBi and NaCaBi are strong topological insulator under controlled band engineering. Here, we propose three different ways to engineer the band topology to get a non-trivial order: (i) hydrostatic pressure, (ii) biaxial strain (due to epitaxial mismatch), and (iii) doping. Non-triviality is confirmed by investigating bulk band inversion, topological Z invariant, surface dispersion and spin texture. Interestingly, some of these compounds also show a three dimensional topological nodal line semi-metal (NLS) state in the absence of spin orbit coupling (SOC). In these NLS phases, the closed loop of band degeneracy in the Brillouin zone lie close to the Fermi level. Moreover, a drumhead like flat surface state is observed on projecting the bulk state on the [001] surface. The inclusion of SOC opens up a small band gap making them behave like a topological insulator.
在本文中,我们预测了具有[化学式:见原文](#189)空间群的XX'Bi化合物家族中不平凡能带拓扑结构的出现。使用杂化泛函框架内的第一性原理计算,我们证明了在可控能带工程下,NaSrBi和NaCaBi是强拓扑绝缘体。在此,我们提出三种不同的能带拓扑工程方法以获得不平凡序:(i)静水压力,(ii)双轴应变(由于外延失配),以及(iii)掺杂。通过研究体带反转、拓扑Z不变量、表面色散和自旋纹理来确认其不平凡性。有趣的是,其中一些化合物在没有自旋轨道耦合(SOC)的情况下还表现出三维拓扑节线半金属(NLS)态。在这些NLS相中,布里渊区中的能带简并闭环靠近费米能级。此外,将体态投影到[001]表面时会观察到类似鼓面的平坦表面态。加入SOC会打开一个小带隙,使其表现得像拓扑绝缘体。