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通过原子层厚度定制介电表面电荷

Tailoring Dielectric Surface Charge via Atomic Layer Thickness.

作者信息

Hayashida Tomoki, Yokota Kazumichi, Murayama Sanae, Arima Akihide, Tsutsui Makusu, Taniguchi Masateru

机构信息

The Institute of Scientific and Industrial Research , Osaka University , Ibaraki , Osaka 567-0047 , Japan.

出版信息

ACS Appl Mater Interfaces. 2020 Jan 29;12(4):5025-5030. doi: 10.1021/acsami.9b18444. Epub 2020 Jan 13.

Abstract

Channel surface property is a crucial factor that affects capture-to-translocation dynamics of single-particles in solid-state pores. Here, we show that atomically-thin dielectrics can be used to finely tune the pore wall surface potential. We isotopically coated alumina of atomically controlled thickness on a SiN micropore. The surface zeta-potential in a buffer was found to decrease sharply by 1 nm thick deposition that served as a water-permeable ultra-thin sheet to modulate the effective charge density of the AlO/SiN multilayer structure. Further thickening of the atomic layer enabled to control the zeta potential with a thickness at 3.4 mV/nm resolution. Accordingly, we observed concomitant enhancement in the capture rate and the translocation speed of negatively charged polymeric particles by virtue of the mitigated electroosmotic back flow in the functionalized pore channel. This simple method is widely applicable for tailoring the surface charge properties of essentially any sensors and devices working in aqueous media.

摘要

通道表面性质是影响固态孔中单粒子捕获到转运动力学的关键因素。在此,我们表明原子级薄的电介质可用于精细调节孔壁表面电位。我们在氮化硅微孔上同位素涂覆了原子厚度可控的氧化铝。发现在缓冲液中,通过1纳米厚的沉积,表面zeta电位急剧下降,该沉积充当了透水超薄片,以调节AlO/SiN多层结构的有效电荷密度。原子层的进一步增厚能够以3.4 mV/nm的分辨率控制zeta电位。相应地,由于功能化孔道中电渗回流的减轻,我们观察到带负电的聚合物颗粒的捕获率和转运速度同时提高。这种简单方法广泛适用于定制基本上任何在水性介质中工作的传感器和设备的表面电荷性质。

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