直流电镀法制备的(111)纳米孪晶铜薄膜中的各向异性晶粒生长

Anisotropic Grain Growth in (111) Nanotwinned Cu Films by DC Electrodeposition.

作者信息

Lu Tien-Lin, Shen Yu-An, Wu John A, Chen Chih

机构信息

Department of Materials Science & Engineering, National Chiao Tung University, Hsin-chu 30010, Taiwan.

出版信息

Materials (Basel). 2019 Dec 28;13(1):134. doi: 10.3390/ma13010134.

DOI:10.3390/ma13010134

PMID:31905613

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6981876/

Abstract

We have reported a method of fabricating (111)-orientated nanotwinned copper (nt-Cu) by direct current electroplating. X-ray analysis was performed for the samples annealed at 200 to 350 °C for an hour. X-ray diffraction indicates that the (200) signal intensity increases while (111) decreases. Abnormal grain growth normally results from transformation of surface energy or strain energy density. The average grain size increased from 3.8 µm for the as-deposited Cu films to 65-70 µm after the annealing at 250 °C for 1 h. For comparison, no significant grain growth behavior was observed by random Cu film after annealing for an hour. This research shows the potential for its broad electric application in interconnects and three-dimensional integrated circuit (3D IC) packaging.

摘要

我们已经报道了一种通过直流电镀制备（111）取向纳米孪晶铜（nt-Cu）的方法。对在200至350°C退火一小时的样品进行了X射线分析。X射线衍射表明，（200）信号强度增加而（111）信号强度降低。异常晶粒生长通常是由表面能或应变能密度的转变引起的。平均晶粒尺寸从沉积态铜膜的3.8 µm增加到在250°C退火1小时后的65 - 70 µm。相比之下，随机铜膜退火一小时后未观察到明显的晶粒生长行为。这项研究表明了其在互连和三维集成电路（3D IC）封装中广泛电气应用的潜力。