Guo Nan, Xiao Lin, Gong Fan, Luo Man, Wang Fang, Jia Yi, Chang Huicong, Liu Junku, Li Qing, Wu Yang, Wang Yang, Shan Chongxin, Xu Yang, Zhou Peng, Hu Weida
Qian Xuesen Laboratory of Space Technology China Academy of Space Technology Beijing 100094 China.
State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yutian Road Shanghai 200083 China.
Adv Sci (Weinh). 2019 Nov 11;7(1):1901637. doi: 10.1002/advs.201901637. eCollection 2020 Jan.
Assembling nanomaterials into hybrid structures provides a promising and flexible route to reach ultrahigh responsivity by introducing a trap-assisted gain () mechanism. However, the high-gain photodetectors benefitting from long carrier lifetime often possess slow response time () due to the inherent - tradeoff. Here, a light-driven junction field-effect transistor (LJFET), consisting of an n-type ZnO belt as the channel material and a p-type WSe nanosheet as a photoactive gate material, to break the - tradeoff through decoupling the gain from carrier lifetime is reported. The photoactive gate material WSe under illumination enables a conductive path for externally applied voltage, which modulates the depletion region within the ZnO channel efficiently. The gain and response time are separately determined by the field effect modulation and the switching speed of LJFET. As a result, a high responsivity of 4.83 × 10 A W with a gain of ≈10 and a rapid response time of ≈10 µs are obtained simultaneously. The LJFET architecture offers a new approach to realize high-gain and fast-response photodetectors without the - tradeoff.
通过引入陷阱辅助增益（）机制，将纳米材料组装成混合结构为实现超高响应度提供了一条有前景且灵活的途径。然而，受益于长载流子寿命的高增益光电探测器由于固有的-权衡，往往具有较慢的响应时间（）。在此，报道了一种光驱动结场效应晶体管（LJFET），它由n型ZnO带作为沟道材料和p型WSe纳米片作为光活性栅极材料组成，通过将增益与载流子寿命解耦来打破-权衡。光照下的光活性栅极材料WSe为外部施加的电压提供了一条导电路径，从而有效地调制了ZnO沟道内的耗尽区。增益和响应时间分别由场效应调制和LJFET的开关速度决定。结果，同时获得了4.83×10 A W的高响应度、≈10的增益和约10 µs的快速响应时间。LJFET架构为实现无-权衡的高增益和快速响应光电探测器提供了一种新方法。
