Schwarz Kyra N, Geraghty Paul B, Mitchell Valerie D, Khan Saeed-Uz-Zaman, Sandberg Oskar J, Zarrabi Nasim, Kudisch Bryan, Subbiah Jegadesan, Smith Trevor A, Rand Barry P, Armin Ardalan, Scholes Gregory D, Jones David J, Ghiggino Kenneth P
Department of Physics , Swansea University , Singleton Park , Swansea , Wales SA2 8PP , United Kingdom.
J Am Chem Soc. 2020 Feb 5;142(5):2562-2571. doi: 10.1021/jacs.9b12526. Epub 2020 Jan 22.
Organic photovoltaic (OPV) efficiencies continue to rise, raising their prospects for solar energy conversion. However, researchers have long considered how to suppress the loss of free carriers by recombination-poor diffusion and significant Coulombic attraction can cause electrons and holes to encounter each other at interfaces close to where they were photogenerated. Using femtosecond transient spectroscopies, we report the nanosecond grow-in of a large transient Stark effect, caused by nanoscale electric fields of ∼487 kV/cm between photogenerated free carriers in the device active layer. We find that particular morphologies of the active layer lead to an energetic cascade for charge carriers, suppressing pathways to recombination, which is ∼2000 times less than predicted by Langevin theory. This in turn leads to the buildup of electric charge in donor and acceptor domains-away from the interface-resistant to bimolecular recombination. Interestingly, this signal is only experimentally obvious in thick films due to the different scaling of electroabsorption and photoinduced absorption signals in transient absorption spectroscopy. Rather than inhibiting device performance, we show that devices up to 600 nm thick maintain efficiencies of >8% because domains can afford much higher carrier densities. These observations suggest that with particular nanoscale morphologies the bulk heterojunction can go beyond its established role in charge photogeneration and can act as a capacitor, where adjacent free charges are held away from the interface and can be protected from bimolecular recombination.
有机光伏(OPV)效率持续提高,提升了其太阳能转换的前景。然而,长期以来研究人员一直在思考如何通过抑制自由载流子的损失来实现这一目标,因为扩散不佳以及显著的库仑吸引力会导致电子和空穴在靠近光生位置的界面处相互相遇。我们利用飞秒瞬态光谱技术,报道了由器件有源层中光生自由载流子之间约487 kV/cm的纳米级电场引起的大瞬态斯塔克效应的纳秒级增长。我们发现,有源层的特定形态会导致电荷载流子的能量级联,抑制复合途径,其复合率比朗之万理论预测的低约2000倍。这反过来又导致施主和受主域中电荷的积累——远离界面——从而抵抗双分子复合。有趣的是,由于瞬态吸收光谱中电吸收和光致吸收信号的不同缩放比例,这种信号仅在厚膜中在实验上较为明显。我们发现,厚度达600 nm的器件效率保持在8%以上,这表明特定的纳米级形态不仅不会抑制器件性能,反而因为域能够承受更高的载流子密度。这些观察结果表明,具有特定纳米级形态的体异质结可以超越其在电荷光生方面既定的作用,还可以充当电容器,使相邻的自由电荷远离界面,并免受双分子复合的影响。