Department of Electrical and Computer Engineering, Tufts University, Medford, MA, 02155, USA; Nano Lab, Advanced Technology Laboratory, Tufts University, Medford, MA, 02155, USA.
Interstate University of Technology Buchs NTB, Werdenbergstrasse 4, 9471, Switzerland.
Biosens Bioelectron. 2020 Feb 15;150:111931. doi: 10.1016/j.bios.2019.111931. Epub 2019 Nov 26.
Transfection is a key function for many single-cell analyses. Reversible electroporation (EP) using high intensity electric fields is a simple means of transfection applicable to most cell types. For reversible EP, precise control over the electric field is critical to regulate the induced pore densities in the membrane and maintain cell viability. Individually accessible microelectrode arrays enabled by semiconductor fabrication methods have emerged as a viable technology for single-cell analyses but do not provide for effective electroporation capabilities due to the planar arrangement of electrodes. Towards the goal of a fully integrated single-cell analysis platform, we utilize a commercial complementary metal-oxide-semiconductor (CMOS) process to realize microcavities which allow for single-cell confinement with integrated three-dimensionally aligned electrodes for effective poration. The structure is formed using the inherent metal stack available within the CMOS process as a hard etch mask for deep-reactive ion etching. Using this structure, to our knowledge, we present the first on-CMOS demonstration of controlled electroporation with the goal of transfection using human embryonic kidney cells (HEK-293) stained with Calcein as a model. We report an increase in calcein leaching from the cells subject to increasing electric field intensities with subsequent reuptake confirming cell viability post electroporation. These results are supported by numerical simulation of theoretical pore density which are in good agreement with numerical simulation. Combined with simple optical or electrical feedback, the structure is suitable for precise electroporation control in single-cells.
转染是许多单细胞分析的关键功能。使用高强度电场的可逆电穿孔(EP)是一种简单的转染方法,适用于大多数细胞类型。对于可逆 EP,精确控制电场对于调节膜中的诱导孔密度和维持细胞活力至关重要。半导体制造方法实现的可单独访问的微电极阵列已成为单细胞分析的可行技术,但由于电极的平面排列,不提供有效的电穿孔能力。为了实现完全集成的单细胞分析平台,我们利用商业互补金属氧化物半导体(CMOS)工艺来实现微腔,允许对单细胞进行限制,并集成三维对准的电极以进行有效穿孔。该结构使用 CMOS 工艺中固有的金属叠层作为深反应离子刻蚀的硬掩模形成。使用这种结构,据我们所知,我们首次在 CMOS 上展示了可控电穿孔的演示,目标是使用钙黄绿素染色的人胚肾细胞(HEK-293)作为模型进行转染。我们报告了随着电场强度的增加,细胞内钙黄绿素渗漏增加,随后再摄取证实了电穿孔后的细胞活力。这些结果得到了理论孔密度的数值模拟的支持,理论孔密度与数值模拟吻合得很好。结合简单的光学或电气反馈,该结构适用于单细胞的精确电穿孔控制。