具有氩离子注入边缘终端的高压β-GaO肖特基二极管。

High-Voltage β-GaO Schottky Diode with Argon-Implanted Edge Termination.

作者信息

Gao Yangyang, Li Ang, Feng Qian, Hu Zhuangzhuang, Feng Zhaoqing, Zhang Ke, Lu Xiaoli, Zhang Chunfu, Zhou Hong, Mu Wenxiang, Jia Zhitai, Zhang Jincheng, Hao Yue

机构信息

State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.

State Key Laboratory of Crystal Materials, Key laboratory of Functional Crystal Materials and Device, Shandong University, Jinan, 250100, China.

出版信息

Nanoscale Res Lett. 2019 Jan 7;14(1):8. doi: 10.1186/s11671-018-2849-y.

DOI:10.1186/s11671-018-2849-y

PMID:30617428

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6323049/

Abstract

The edge-terminated Au/Ni/β-GaO Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts. With the implantation energy of 50 keV and dose of 5 × 10 cm and 1 × 10 cm, the reverse breakdown voltage increases from 209 to 252 and 451 V (the maximum up to 550 V) and the Baliga figure-of-merit (V/R) also increases from 25.7 to 30.2 and 61.6 MW cm, about 17.5% and 140% enhancement, respectively. According to the 2D simulation, the electric fields at the junction corner are smoothed out after argon implantation and the position of the maximum breakdown electric filed, 5.05 MV/cm, changes from the anode corner at the interface to the overlap corner just under the implantation region. The temperature dependence of the forward characteristics was also investigated.

摘要

通过氩离子注入在阳极接触的周边形成高电阻率层，制备了边缘终止的Au/Ni/β-GaO肖特基势垒二极管。在注入能量为50 keV、剂量为5×10¹⁵ cm⁻²和1×10¹⁶ cm⁻²时，反向击穿电压从209 V增加到252 V和451 V（最大值可达550 V），巴利加优值（V²/R）也从25.7 MW/cm增加到30.2 MW/cm和61.6 MW/cm，分别提高了约17.5%和140%。根据二维模拟，氩离子注入后结角处的电场被平滑，最大击穿电场的位置（5.05 MV/cm）从界面处的阳极角变为注入区域正下方的重叠角。还研究了正向特性的温度依赖性。