Jung Seung-Woo, Shin Myeong-Cheol, Schweitz Michael A, Oh Jong-Min, Koo Sang-Mo
Department Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea.
Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Gokisocho, Showa Ward, Nagoya, Aichi 466-8555, Japan.
Materials (Basel). 2021 Feb 2;14(3):683. doi: 10.3390/ma14030683.
In this study, the physical and electrical characteristics of an AlN/4H-SiC Schottky barrier diode-based temperature sensor annealed in various gas atmospheres were investigated. An aluminum nitride (AlN) thin film was deposited on a 4H-SiC substrate via radio-frequency sputtering followed by annealing in N or O gas. The chemical composition of the film was determined by X-ray photoelectron spectroscopy (XPS) before and after annealing, and its electrical properties were evaluated by plotting a current-voltage (I-V) curve. The voltage-temperature (V-T) characteristics of the sensor were extracted from the current-voltage-temperature (I-V-T) plots constructed in the temperature range between 475 and 300 K in steps of 25 K. Sensitivities of 9.77, 9.37, and 2.16 mV/K were obtained for the as-grown, N-annealed, and O-annealed samples, respectively.
在本研究中，对在各种气体气氛中退火的基于AlN/4H-SiC肖特基势垒二极管的温度传感器的物理和电学特性进行了研究。通过射频溅射在4H-SiC衬底上沉积氮化铝（AlN）薄膜，然后在N或O气体中进行退火。在退火前后通过X射线光电子能谱（XPS）确定薄膜的化学成分，并通过绘制电流-电压（I-V）曲线来评估其电学性能。传感器的电压-温度（V-T）特性是从在475至300 K温度范围内以25 K步长构建的电流-电压-温度（I-V-T）图中提取的。对于生长态、N退火和O退火的样品，分别获得了9.77、9.37和2.16 mV/K的灵敏度。
