Wu Zenghui, Tai Guoan, Shao Wei, Wang Rui, Hou Chuang
The State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China.
School of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China.
Nanoscale. 2020 Feb 14;12(6):3787-3794. doi: 10.1039/c9nr08967e. Epub 2020 Jan 29.
Boron atoms possess a short covalent radius and the flexibility to adopt sp hybridization, which favour the formation of diverse two-dimensional allotropes of boron. Several examples of such boron sheets with metallic nature have been reported recently. However, a semiconducting boron crystal with a direct bandgap is rarely reported either in bulk boron crystals or in two-dimensional boron sheets. Here, the boron sheets with a direct bandgap are synthesized on a Ni foil substrate by chemical vapor deposition. The boron sheets with 48 boron atoms per unit cell have a quasicubic structure, and they are semiconducting and have a direct bandgap of around 2.4 eV, which are verified by combining theoretical and experimental investigations. The result greatly expands the known allotropy of the fifth element and opens vast opportunities to design 2D boron sheets with tunable optical, electronic, magnetic and chemical properties.
硼原子具有短的共价半径以及采用sp杂化的灵活性,这有利于形成多种二维硼的同素异形体。最近已经报道了几个具有金属性质的此类硼片的例子。然而,无论是在块状硼晶体还是二维硼片中,具有直接带隙的半导体硼晶体都鲜有报道。在此,通过化学气相沉积在镍箔衬底上合成了具有直接带隙的硼片。每单位晶胞含有48个硼原子的硼片具有准立方结构,它们是半导体,并且具有约2.4 eV的直接带隙,这通过理论和实验研究相结合得到了验证。该结果极大地扩展了第五元素已知的同素异形性,并为设计具有可调光学、电子、磁性和化学性质的二维硼片开辟了广阔的机会。