Mazaheri Ali, Javadi Mohammad, Abdi Yaser
Nanophysics Research Laboratory, Department of Physics, University of Tehran, Tehran 14395-547, Iran.
ACS Appl Mater Interfaces. 2021 Feb 24;13(7):8844-8850. doi: 10.1021/acsami.0c22580. Epub 2021 Feb 10.
Two-dimensional (2D) boron sheets (borophenes) are promising materials for the next generation of electronic devices because of their metallic conductivity. Molecular beam epitaxy has remained the main approach for the growth of borophene, which considerably restricts large-scale production of 2D boron sheets. The high melting point of boron and the growth of borophenes at moderate temperatures posed a significant challenge for the synthesis of borophenes. Employing diborane (BH) pyrolysis as a pure boron source, we report, for the first time, the growth of atomic-thickness borophene sheets by chemical vapor deposition (CVD). A methodical study on the effect of temperature, deposition rate, and pressure on the growth of 2D boron sheets is provided and detailed analyses about the morphology and crystalline phase of borophene sheets are presented. The CVD-borophene layers display an average thickness of 4.2 Å, χ crystalline structure, and metallic conductivity. We also present experimental evidence supporting the formation of stacked bilayer and trilayer borophene sheets. Our method paves the way for empirical investigations on borophenes.
二维（2D）硼片（硼烯）因其金属导电性而成为下一代电子器件的有前景的材料。分子束外延一直是硼烯生长的主要方法，这在很大程度上限制了二维硼片的大规模生产。硼的高熔点以及硼烯在中等温度下的生长对硼烯的合成构成了重大挑战。我们首次报道了以乙硼烷（BH）热解作为纯硼源，通过化学气相沉积（CVD）生长原子厚度的硼烯片。提供了关于温度、沉积速率和压力对二维硼片生长影响的系统研究，并给出了硼烯片形态和晶相的详细分析。CVD生长的硼烯层平均厚度为4.2 Å，具有χ晶体结构和金属导电性。我们还提供了支持堆叠双层和三层硼烯片形成的实验证据。我们的方法为硼烯的实证研究铺平了道路。
