Naing Thura Lin, Rocheleau Tristan O, Alon Elad, Nguyen Clark T-C
IEEE Trans Ultrason Ferroelectr Freq Control. 2020 Jul;67(7):1377-1391. doi: 10.1109/TUFFC.2020.2969530. Epub 2020 Jan 27.
A 61-MHz Pierce oscillator constructed in 0.35- [Formula: see text] CMOS technology and referenced to a polysilicon surface-micromachined capacitive-gap-transduced wine-glass disk resonator has achieved phase noise marks of -119 dBc/Hz at 1-kHz offset and -139 dBc/Hz at far-from-carrier offsets. When divided down to 13 MHz, this corresponds to -132 dBc/Hz at 1-kHz offset from the carrier and -152 dBc/Hz far-from-carrier, sufficient for mobile phone reference oscillator applications, using a single MEMS resonator, i.e., without the need to array multiple resonators. Key to achieving these marks is a Pierce-based circuit design that harnesses a MEMS-enabled input-to-output shunt capacitance more than 100× smaller than exhibited by macroscopic quartz crystals to enable enough negative resistance to instigate and sustain oscillation while consuming only [Formula: see text] of power-a reduction of ∼ 4.5× over previous work. Increasing the bias voltage of the resonator by 1.25 V further reduces power consumption to [Formula: see text] at the cost of only a few decibels in far-from-carrier phase noise. This oscillator achieves a 1-kHz-offset figure of merit (FOM) of -231 dB, which is now the best among published chip-scale oscillators to date. A complete linear circuit analysis quantifies the influence of resonator input-to-output shunt capacitance on power consumption and predicts further reductions in power consumption via reduction of electrode-to-resonator transducer gaps and bond pad sizes. The demonstrated phase noise and power consumption posted by this tiny MEMS-based oscillator are attractive as potential enablers for low-power "set-and-forget" autonomous sensor networks and embedded radios.
一款采用0.35微米互补金属氧化物半导体(CMOS)技术构建、以多晶硅表面微机械加工的电容间隙换能型酒杯盘式谐振器为参考的61兆赫兹皮尔斯振荡器,在1千赫兹偏移时实现了-119分贝/赫兹的相位噪声指标,在远离载波偏移时达到了-139分贝/赫兹。当分频至13兆赫兹时,这对应于在距载波1千赫兹偏移时为-132分贝/赫兹,远离载波时为-152分贝/赫兹,足以满足手机参考振荡器应用,且仅使用单个微机电系统(MEMS)谐振器,即无需排列多个谐振器。实现这些指标的关键在于基于皮尔斯的电路设计,该设计利用了一个比宏观石英晶体所呈现的小100多倍的启用MEMS的输入到输出并联电容,以实现足够的负电阻来启动和维持振荡,同时仅消耗[公式:见文本]的功率,比之前的工作降低了约4.5倍。将谐振器的偏置电压提高1.25伏,可进一步将功耗降低至[公式:见文本],代价是在远离载波的相位噪声中仅增加几分贝。该振荡器实现了-231分贝的1千赫兹偏移品质因数(FOM),这是迄今为止已发表的芯片级振荡器中最好的。完整的线性电路分析量化了谐振器输入到输出并联电容对功耗的影响,并预测通过减小电极到谐振器换能器间隙和键合焊盘尺寸可进一步降低功耗。这款基于微小MEMS的振荡器所展示的相位噪声和功耗,作为低功耗“即设即用”自主传感器网络和嵌入式无线电的潜在促成因素具有吸引力。