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一款6.7微瓦的低噪声紧凑型锁相环,带有基于微机电系统(MEMS)的输入参考振荡器,具有高分辨率、无死区/盲区的鉴频鉴相器(PFD)。

A 6.7 μW Low-Noise, Compact PLL with an Input MEMS-Based Reference Oscillator Featuring a High-Resolution Dead/Blind Zone-Free PFD.

作者信息

Kira Ahmed, Elsayed Mohannad Y, Allidina Karim, Chodavarapu Vamsy P, El-Gamal Mourad N

机构信息

Department of Electrical and Computer Engineering, McGill University, Montreal, QC H3A 0G4, Canada.

MEMS Vision International Inc., Montreal, QC H4P 2R9, Canada.

出版信息

Sensors (Basel). 2024 Dec 13;24(24):7963. doi: 10.3390/s24247963.

Abstract

This article reports a 110.2 MHz ultra-low-power phase-locked loop (PLL) for MEMS timing/frequency reference oscillator applications. It utilizes a 6.89 MHz MEMS-based oscillator as an input reference. An ultra-low-power, high-resolution phase-frequency detector (PFD) is utilized to achieve low-noise performance. Eliminating the reset feedback path used in conventional PFDs leads to dead/blind zone-free phase characteristics, which are crucial for low-noise applications within a wide operating frequency range. The PFD operates up to 2.5 GHz and achieves a linear resolution of 100 ps input time difference (Δtin), without the need for any additional calibration circuits. The linearity of the proposed PFD is tested over a phase difference corresponding to aa Δtin ranging from 100 ps to 50 ns. At a 1 V supply voltage, it shows an error of <±1.6% with a resolution of 100 ps and a frequency-normalized power consumption (Pn) of 0.106 pW/Hz. The PLL is designed and fabricated using a TSMC 65 nm CMOS process instrument and interfaced with the MEMS-based oscillator. The system reports phase noises of -106.21 dBc/Hz and -135.36 dBc/Hz at 1 kHz and 1 MHz offsets, respectively. It consumes 6.709 μW at a 1 V supply and occupies an active CMOS area of 0.1095 mm.

摘要

本文报道了一种用于MEMS定时/频率参考振荡器应用的110.2MHz超低功耗锁相环(PLL)。它采用一个基于6.89MHz MEMS的振荡器作为输入参考。利用一个超低功耗、高分辨率的鉴相鉴频器(PFD)来实现低噪声性能。消除传统PFD中使用的复位反馈路径可实现无死区/盲区的相位特性,这对于宽工作频率范围内的低噪声应用至关重要。该PFD工作频率高达2.5GHz,实现了100ps输入时间差(Δtin)的线性分辨率,无需任何额外的校准电路。在所提出的PFD的线性度在对应于100ps至50ns的Δtin的相位差范围内进行了测试。在1V电源电压下,其分辨率为100ps时误差<±1.6%,频率归一化功耗(Pn)为0.106pW/Hz。该PLL采用台积电65nm CMOS工艺器件进行设计和制造,并与基于MEMS的振荡器接口。该系统在1kHz和1MHz偏移时的相位噪声分别为-106.21dBc/Hz和-135.36dBc/Hz。在1V电源下它消耗6.709μW,占用的有源CMOS面积为0.1095mm²。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/701c/11679112/509ab3991072/sensors-24-07963-g001.jpg

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