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通过金属有机化学气相沉积（MOCVD）生长的N极性GaN:Mg薄膜中的小丘辅助p型增强。

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD.

作者信息

Rocco Emma, Licata Olivia, Mahaboob Isra, Hogan Kasey, Tozier Sean, Meyers Vincent, McEwen Benjamin, Novak Steven, Mazumder Baishakhi, Reshchikov Michael, Douglas Bell L, Shahedipour-Sandvik F

机构信息

College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY, USA.

Department of Materials Design and Innovation, University at Buffalo, Buffalo, NY, USA.

出版信息

Sci Rep. 2020 Jan 29;10(1):1426. doi: 10.1038/s41598-020-58275-1.

DOI:10.1038/s41598-020-58275-1
PMID:31996741
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6989458/
Abstract

We report on the enhanced incorporation efficiency of magnesium dopants into facets of hexagonal hillock structures in N-polar GaN, studied by comparative analysis of GaN:Mg films grown by MOCVD on high and low hillock density GaN template layers. Total magnesium concentration in planar regions surrounding a hillock structure is comparable to that within hillock sidewall facets measured at 1.3 × 10 cm by atom probe tomography, and clustering of Mg atoms is seen in all regions of the film. Within individual hillock structures a decreased Mg cluster density is observed within hillock structures as opposed to the planar regions surrounding a hillock. Additionally, the Mg cluster radius is decreased within the hillock sidewall. The favorable incorporation of Mg is attributed to Mg dopants incorporating substitutionally for Ga during growth of semi-polar facets of the hillock structures. Enhanced p-type conductivity of GaN:Mg films grown on high hillock density template layers is verified by optical and electrical measurement.

摘要

我们报告了通过对金属有机化学气相沉积（MOCVD）在高、低小丘密度GaN模板层上生长的GaN:Mg薄膜进行对比分析，研究了N极性GaN中镁掺杂剂在六方小丘结构晶面中的掺入效率提高的情况。通过原子探针断层扫描在1.3×10 cm处测量，小丘结构周围平面区域的总镁浓度与小丘侧壁晶面内的总镁浓度相当，并且在薄膜的所有区域都观察到了镁原子的聚集。在单个小丘结构中，与小丘周围的平面区域相比，小丘结构内观察到镁团簇密度降低。此外，小丘侧壁内的镁团簇半径减小。镁的良好掺入归因于在小丘结构的半极性晶面生长过程中，镁掺杂剂替代Ga掺入。通过光学和电学测量验证了在高小丘密度模板层上生长的GaN:Mg薄膜的p型导电性增强。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/d528a1ba52d7/41598_2020_58275_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/8bcacbfc8fc2/41598_2020_58275_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/be66d792ca38/41598_2020_58275_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/c32ed74c0345/41598_2020_58275_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/6b95c123ee39/41598_2020_58275_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/f8c7a879fc52/41598_2020_58275_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/9e5a2f672d38/41598_2020_58275_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/d528a1ba52d7/41598_2020_58275_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/8bcacbfc8fc2/41598_2020_58275_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/be66d792ca38/41598_2020_58275_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/c32ed74c0345/41598_2020_58275_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/6b95c123ee39/41598_2020_58275_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/f8c7a879fc52/41598_2020_58275_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/9e5a2f672d38/41598_2020_58275_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d9f/6989458/d528a1ba52d7/41598_2020_58275_Fig7_HTML.jpg

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本文引用的文献

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