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基于硼酸探针的 AlGaN/GaN HEMT 传感器检测过氧化氢。

Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor.

机构信息

College of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY 12203, USA.

出版信息

Exp Biol Med (Maywood). 2021 Mar;246(5):523-528. doi: 10.1177/1535370220972030. Epub 2020 Nov 17.

DOI:10.1177/1535370220972030
PMID:33203229
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7934145/
Abstract

The results from this study demonstrate the potential of an AlGaN/GaN high electron mobility transistor sensor for the detection of reactive and transient biological molecules such as hydrogen peroxide. A boronate-based fluorescent probe was used with this device to detect the presence of micromolar levels of hydrogen peroxide typically associated with intracellular processes. The real-time electrical response of the high electron mobility transistor sensor showed a gradual decrease in the two-dimensional electron gas current as the reaction proceeded over time. A corresponding increase in the emission intensity was measured from the fluorescent probe with the progression of the reaction. The fluorescence from the boronate probe was used as an indicator to confirm the detection of hydrogen peroxide. These results demonstrate the dynamic measurement capability of AlGaN/GaN high electron mobility transistor sensors in monitoring real-time reactions of reactive oxygen species such as hydrogen peroxide.

摘要

本研究结果表明,AlGaN/GaN 高电子迁移率晶体管传感器具有检测过氧化氢等反应性和瞬态生物分子的潜力。该器件采用基于硼酸的荧光探针来检测通常与细胞内过程相关的微摩尔级别的过氧化氢的存在。随着时间的推移,高电子迁移率晶体管传感器的实时电响应显示二维电子气电流逐渐下降。随着反应的进行,从荧光探针测量到的发射强度相应增加。硼酸盐探针的荧光被用作确认过氧化氢检测的指示剂。这些结果表明,AlGaN/GaN 高电子迁移率晶体管传感器在监测过氧化氢等活性氧物种的实时反应方面具有动态测量能力。

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