Electrical Environment Research Center, Korea Electrotechnology Research Institute (KERI), 12, Bulmosan-Ro 10 Beon-Gil, Changwon, 51543, South Korea.
Sci Rep. 2023 Jun 22;13(1):10156. doi: 10.1038/s41598-023-37336-1.
A slot structure was combined with a discharge electrode to limit incident high-power microwaves via the integration of plasma discharge. At the target resonating frequency of 9.45 GHz, the surface current was concentrated at an electrode, and the electric field was enhanced by the proposed design to lower the response power level of the incident signal. When a low-power signal is injected, plasma is not generated, and the incident wave travels without insertion loss. Double-stage slot structures were utilized to broaden the band-pass characteristics in the frequency domain, and the demonstrated plasma limiter exhibited an insertion loss of 1.01 dB at 9.45 GHz. The xenon gas pressure was optimized with the shortest distance of 100 µm between the upper and lower electrodes to reduce the discharge power of the plasma. In the case of a high-power signal input, as xenon-gas breakdown occurred, the transmitted signal was close to zero, and most of the high-power signal was reflected with a blocking efficiency of 40.55 dB. The demonstrated result will be useful to protect the receiver of a radio detection and ranging system from the high power microwave.
一种插槽结构与放电电极相结合，通过等离子体放电实现对入射高功率微波的限制。在目标谐振频率 9.45GHz 下，表面电流集中在电极上，通过所提出的设计增强电场，降低入射信号的响应功率水平。当注入低功率信号时，不会产生等离子体，入射波在没有插入损耗的情况下传播。采用双级槽结构拓宽了频域的带通特性，所展示的等离子体限幅器在 9.45GHz 时的插入损耗为 1.01dB。优化了氙气压力，使上下电极之间的最短距离达到 100µm，以降低等离子体的放电功率。在高功率信号输入的情况下，当发生氙气击穿时，传输信号接近零，大部分高功率信号被反射，阻断效率为 40.55dB。所展示的结果将有助于保护无线电探测和测距系统的接收器免受高功率微波的影响。
