Choi Sumin, Agafonov Viatcheslav N, Davydov Valery A, Kulikova Ludmila F, Plakhotnik Taras
School of Mathematics and Physics, The University of Queensland, QLD 4072, Australia.
Nanotechnology. 2020 May 15;31(20):205709. doi: 10.1088/1361-6528/ab72bb. Epub 2020 Feb 4.
We have produced two types of synthetic nanodiamonds Si- and Si,P-doped and have characterized the thermal susceptibilities of the spectral band of silicon-vacancy (SiV) centers at approximately 740 nm in each case. The covered temperature range from 295 to 350 K is of interest for thermometry in biological systems. Comparison of the relative brightness of the Si- and Si,P-doped crystals shows that phosphorous significantly increases average concentration and homogeneity of distribution of SiV centers in nanodiamonds. Moreover, linear dependence on temperature of the zero-phonon line width in Si-doped crystals is 0.061(2) nm K but is 0.047(3) nm K, about 35% smaller in Si,P-doped nanodiamonds. This proves control of SiV properties with additional chemical doping and close proximity of Si and P atoms.
我们制备了两种类型的合成纳米金刚石，即硅掺杂和硅磷共掺杂的纳米金刚石，并分别表征了每种情况下硅空位（SiV）中心在约740 nm光谱带的热磁化率。295至350 K的温度范围对生物系统中的温度测量很有意义。硅掺杂和硅磷共掺杂晶体相对亮度的比较表明，磷显著提高了纳米金刚石中SiV中心的平均浓度和分布均匀性。此外，硅掺杂晶体中零声子线宽对温度的线性依赖关系为0.061(2) nm/K，而在硅磷共掺杂的纳米金刚石中为0.047(3) nm/K，约小35%。这证明了通过额外的化学掺杂以及硅和磷原子的紧密相邻对SiV性质进行了调控。
