Zhang Cai, Jin Xin, Liang Yan, Yang Liu, Li Jing, Wang Rui, Liu Baodan, Lv Xuewei, Jiang Xin
Shenyang National Laboratory for Materials Science (SYNL), Institute of Metal Research (IMR), Chinese Academy of Sciences (CAS), No. 72, Wenhua Road, Shenhe District, Shenyang, 110016, China.
School of Materials Science and Engineering, University of Science and Technology of China, No. 72 Wenhua Road, Shenyang, China.
Nanoscale. 2022 Jan 27;14(4):1459-1467. doi: 10.1039/d1nr07753h.
In this work, we demonstrate the growth of homogeneous and well-aligned [0001]-oriented 1-D GaN nanoarrays a modified hydride vapor phase epitaxy (HVPE) process using GaCl and NH as precursors. The density and length of the grown nanowires can be easily controlled by the process parameters. It was found that the growth technique provides Cl-rich growth conditions, which lead to special morphology and optical properties of the GaN nanoarrays. Different from reported GaN nanowires, the as-synthesized GaN nanoarrays in this study exhibit a hollow bamboo-like structure. Also, the cathodoluminescence spectrum shows strong visible luminescence between 400 and 600 nm wavelengths centered at 450 nm, and the disappearance of an intrinsic emission peak, which has been investigated in detail with the assistance of first-principles calculations. The strategy proposed in this work will pave a solid way for the controlled nucleation and growth of well-aligned GaN nanowire arrays which are significant for applications in large-scale integrated optoelectronic nanodevices, functionalized sensors and photoelectrocatalysis.
在这项工作中，我们展示了使用GaCl和NH作为前驱体的改进氢化物气相外延（HVPE）工艺生长出的均匀且排列良好的[0001]取向的一维GaN纳米阵列。通过工艺参数可以轻松控制生长的纳米线的密度和长度。研究发现，该生长技术提供了富含Cl的生长条件，这导致了GaN纳米阵列具有特殊的形态和光学性质。与报道的GaN纳米线不同，本研究中合成的GaN纳米阵列呈现出中空的竹状结构。此外，阴极发光光谱显示在400至600 nm波长之间以450 nm为中心有强烈的可见发光，并且本征发射峰消失，借助第一性原理计算对此进行了详细研究。这项工作中提出的策略将为排列良好的GaN纳米线阵列的可控成核和生长铺平坚实道路，这对于大规模集成光电子纳米器件、功能化传感器和光电催化应用具有重要意义。
