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钙钛矿光电探测器在单光子水平下的频率和功率相关光响应

Frequency- and Power-Dependent Photoresponse of a Perovskite Photodetector Down to the Single-Photon Level.

作者信息

Xu Zihan, Yu Yugang, Arya Shaurya, Niaz Iftikhar Ahmad, Chen Yimu, Lei Yusheng, Miah Mohammad Abu Raihan, Zhou Jiayun, Zhang Alex Ce, Yan Lujiang, Xu Sheng, Nomura Kenji, Lo Yu-Hwa

机构信息

Department of NanoEngineering, University of California San Diego, La Jolla, California 92093, United States.

Material Science and Engineering Program, University of California San Diego, La Jolla, California 92093, United States.

出版信息

Nano Lett. 2020 Mar 11;20(3):2144-2151. doi: 10.1021/acs.nanolett.0c00161. Epub 2020 Feb 7.

Abstract

Organometallic halide perovskites attract strong interests for their high photoresponsivity and solar cell efficiency. However, there was no systematic study of their power- and frequency-dependent photoresponsivity. We identified two different power-dependent photoresponse types in methylammonium lead iodide perovskite (MAPbI) photodetectors. In the first type, the photoresponse remains constant from 5 Hz to 800 MHz. In the second type, absorption of a single photon can generate a persistent photoconductivity of 30 pA under an applied electric field of 2.5 × 10 V/cm. Additional absorbed photons, up to 8, linearly increase the persistent photoconductivity, which saturates with the absorption of more than 10 photons. This is different than single-photon avalanche detectors (SPADs) because the single-photon response is persistent as long as the device is under bias, providing unique opportunities for novel electronic and photonic devices such as analogue memories for neuromorphic computing. We propose an avalanche-like process for iodine ions and estimate that absorption of a single 0.38 aJ photon triggers the motion of 10 ions, resulting in accumulations of ions and charged vacancies at the MAPbI/electrode interfaces to cause the band bending and change of electric material properties. We have made the first observation that single-digit photon absorption can alter the macroscopic electric and optoelectronic properties of a perovskite thin film.

摘要

有机金属卤化物钙钛矿因其高光响应性和太阳能电池效率而备受关注。然而,此前尚无关于其功率和频率依赖性光响应性的系统研究。我们在甲基碘化铅钙钛矿(MAPbI)光电探测器中识别出两种不同的功率依赖性光响应类型。在第一种类型中,光响应在5赫兹至800兆赫兹范围内保持恒定。在第二种类型中,在2.5×10伏/厘米的外加电场下,单个光子的吸收可产生30皮安的持续光电导性。额外吸收的光子(最多8个)会使持续光电导性线性增加,当吸收超过10个光子时达到饱和。这与单光子雪崩探测器(SPAD)不同,因为只要器件处于偏置状态,单光子响应就会持续,这为新型电子和光子器件(如用于神经形态计算的模拟存储器)提供了独特的机会。我们提出了一种类似碘离子雪崩的过程,并估计吸收单个0.38阿焦耳光子会触发10个离子的移动,导致离子和带电空位在MAPbI/电极界面处积累,从而引起能带弯曲和电材料特性的变化。我们首次观察到个位数光子吸收能够改变钙钛矿薄膜的宏观电学和光电特性。

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