铂（111）上的单层硒化铂：它是金属性的还是绝缘的？
Monolayer of PtSe on Pt(1 1 1): is it metallic or insulating?
作者信息
Perea Acosta Jeremias, Barral María Andrea, María Llois Ana
机构信息
Instituto de Nanociencia y Nanotecnología CNEA-CONICET, Centro Atómico Constituyentes, San Martín, Pcia. de Buenos Aires, Argentina. Depto de Física de la Materia Condensada, Gerencia de Investigación y Aplicaciones, Centro Atómico Constituyentes, CNEA, San Martín, Pcia. de Buenos Aires, Argentina. Instituto Sabato, Universidad Nacional de General San Martín-CNEA, Avenida General Paz 1499, B1650KNA, San Martín, Pcia. de Buenos Aires, Argentina.
出版信息
J Phys Condens Matter. 2020 May 27;32(23):235002. doi: 10.1088/1361-648X/ab73a5.
Motivated by the recent synthesis of a PtSe monolayer by direct selenization of a Pt(1 1 1) substrate and in order to reproduce ARPES experimental results, we investigate if the PtSe film could have grown directly on top of the Pt substrate or if some buffer structure separates both of them. We calculate the electronic properties for different growth possibilities and come to the conclusion that the experimental outcome is not compatible with the growth of a PtSe monolayer directly on top of the Pt(1 1 1) substrate.
受近期通过对Pt(1 1 1)衬底进行直接硒化合成PtSe单层的启发，并且为了重现角分辨光电子能谱（ARPES）实验结果，我们研究了PtSe薄膜是否能够直接生长在Pt衬底之上，或者是否存在某种缓冲结构将它们两者分隔开来。我们针对不同的生长可能性计算了电子性质，并得出结论：实验结果与PtSe单层直接生长在Pt(1 1 1)衬底之上的情况不相符。
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