Babaei Azin, Zanoni Kassio P S, Gil-Escrig Lidón, Pérez-Del-Rey Daniel, Boix Pablo P, Sessolo Michele, Bolink Henk J
Instituto de Ciencia Molecular, Universidad de Valencia, Paterna, Spain.
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany.
Front Chem. 2020 Jan 17;7:936. doi: 10.3389/fchem.2019.00936. eCollection 2019.
Hole transport layers (HTLs) are of fundamental importance in perovskite solar cells (PSCs), as they must ensure an efficient and selective hole extraction, and ohmic charge transfer to the corresponding electrodes. In p-i-n solar cells, the ITO/HTL is usually not ohmic, and an additional interlayer such as MoO is usually placed in between the two materials by vacuum sublimation. In this work, we evaluated the properties of the MoO/TaTm (TaTm is the HTL N4,N4,N4″,N4″-tetra([1,1'-biphenyl]-4-yl)-[1,1':4',1″-terphenyl]-4,4″-diamine) hole extraction interface by selectively annealing either MoO (prior to the deposition of TaTm) or the bilayer MoO/TaTm (without pre-treatment on the MoO), at temperature ranging from 60 to 200°C. We then used these p-contacts for the fabrication of a large batch of fully vacuum deposited PSCs, using methylammonium lead iodide as the active layer. We show that annealing the MoO/TaTm bilayers at high temperature is crucial to obtain high rectification with low non-radiative recombination, due to an increase of the electrode work function and the formation of an ohmic interface with TaTm.
空穴传输层（HTLs）在钙钛矿太阳能电池（PSCs）中至关重要，因为它们必须确保高效且选择性地提取空穴，并实现与相应电极的欧姆电荷转移。在p-i-n型太阳能电池中，ITO/HTL通常并非欧姆接触，通常会通过真空升华在这两种材料之间额外放置一层诸如MoO的中间层。在本工作中，我们通过在60至200°C的温度范围内对MoO（在沉积TaTm之前）或双层MoO/TaTm（不对MoO进行预处理）进行选择性退火，评估了MoO/TaTm（TaTm为空穴传输层N4,N4,N4″,N4″-四（[1,1'-联苯]-4-基）-[1,1':4',1″-三联苯]-4,4″-二胺）空穴提取界面的性能。然后，我们使用这些p型接触来制造大量完全真空沉积的PSCs，以甲基碘化铅作为活性层。我们表明，在高温下对MoO/TaTm双层进行退火对于获得具有低非辐射复合的高整流至关重要，这是由于电极功函数的增加以及与TaTm形成了欧姆界面。
