Al-Dainy Gailan A, Watanabe Fumiya, Kannarpady Ganesh K, Ghosh Anindya, Berry Brian, Biris Alexandru S, Bourdo Shawn E
Center for Integrative Nanotechnology Sciences, University of Arkansas at Little Rock, 2801 S. University Ave., Little Rock, Arkansas 72204, United States.
Department of Chemistry, University of Arkansas at Little Rock, 2801 S. University Ave., Little Rock, Arkansas 72204, United States.
ACS Omega. 2020 Jan 21;5(4):1887-1901. doi: 10.1021/acsomega.9b03451. eCollection 2020 Feb 4.
A conducting polymer of lignosulfonic acid-grafted, polyaniline-doped camphorsulfonic acid (LS-PANI-CSA), created via a low-temperature solution process, has been explored as an efficient hole-transport layer (HTL) for inverted single cation-anion CHNHPbI perovskite solar cells. The performance of the solar cell was optimized in this study by tuning the morphology and work function of LS-PANI-CSA films using dimethylsulfoxide (DMSO) as a solvent in treatment. Results showed that DMSO washing enhanced the electronic properties of the LS-PANI-CSA film and increased its hydrophobicity, which is very important for perovskite growth. The perovskite active layer deposited onto the DMSO-treated LS-PANI-CSA layer had higher crystallinity with large grain sizes (>5 μm), more uniform and complete surface coverage, and very low pinhole density and PbI residues compared to untreated LS-PANI-CSA. These enhancements result in higher device performance and stability. Using DMSO-treated LS-PANI-CSA as an HTL at 15 nm of thickness, a maximum 10.8% power conversion efficiency was obtained in ITO/LS-PANI-CSA/MAPbI/PCBM/BCP/Ag inverted-device configurations. This was a significant improvement compared to 5.18% for devices based on untreated LS-PANI-CSA and a slight improvement over PEDOT:PSS-based devices with 9.48%. Furthermore, the perovskite based on treated LS-PANI-CSA showed the higher stability compared to both untreated LS-PANI-CSA and PEDOT:PSS HTL-based devices.
通过低温溶液法制备的木质素磺酸接枝、聚苯胺掺杂樟脑磺酸的导电聚合物（LS-PANI-CSA），已被探索用作倒置单阳离子-阴离子CHNHPbI钙钛矿太阳能电池的高效空穴传输层（HTL）。在本研究中，通过使用二甲基亚砜（DMSO）作为处理溶剂来调节LS-PANI-CSA薄膜的形态和功函数，优化了太阳能电池的性能。结果表明，DMSO洗涤增强了LS-PANI-CSA薄膜的电子性能并增加了其疏水性，这对钙钛矿生长非常重要。与未处理的LS-PANI-CSA相比，沉积在DMSO处理的LS-PANI-CSA层上的钙钛矿活性层具有更高的结晶度，更大的晶粒尺寸（>5μm），更均匀和完整的表面覆盖，以及非常低的针孔密度和PbI残留。这些增强导致更高的器件性能和稳定性。在ITO/LS-PANI-CSA/MAPbI/PCBM/BCP/Ag倒置器件配置中，使用厚度为15nm的DMSO处理的LS-PANI-CSA作为HTL，获得了最大10.8%的功率转换效率。与基于未处理的LS-PANI-CSA的器件的5.18%相比，这是一个显著的改进，并且比基于PEDOT:PSS的器件的9.48%略有提高。此外，与未处理的LS-PANI-CSA和基于PEDOT:PSS HTL的器件相比，基于处理后的LS-PANI-CSA的钙钛矿显示出更高的稳定性。
