• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

通过结合表面化学与量子限域来控制碳化硅纳米晶体的能级排列

Controlling the Energy-Level Alignment of Silicon Carbide Nanocrystals by Combining Surface Chemistry with Quantum Confinement.

作者信息

Haq Atta Ul, Buerkle Marius, Askari Sadegh, Rocks Conor, Ni Chengsheng, Švrček Vladimir, Maguire Paul, Irvine John T S, Mariotti Davide

机构信息

Nanotechnology & Integrated Bioengineering Centre (NIBEC), Ulster University, Shore Road, Newtownabbey BT37 0QB, United Kingdom.

National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Tsukuba 305-8568, Japan.

出版信息

J Phys Chem Lett. 2020 Mar 5;11(5):1721-1728. doi: 10.1021/acs.jpclett.9b03828. Epub 2020 Feb 18.

DOI:10.1021/acs.jpclett.9b03828
PMID:32040322
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7145349/
Abstract

The knowledge of band edges in nanocrystals (NCs) and quantum-confined systems is important for band alignment in technologically significant applications such as water purification, decomposition of organic compounds, water splitting, and solar cells. While the band energy diagram of bulk silicon carbides (SiCs) has been studied extensively for decades, very little is known about its evolution in SiC NCs. Moreover, the interplay between quantum confinement and surface chemistry gives rise to unusual electronic properties and remains barely understood. Here, we report for the first time the complete band energy diagram of SiC NCs synthesized such that they span the regime from strong to intermediate to weak quantum confinement. The absolute positions of the highest occupied (HOMO) and lowest unoccupied (LUMO) molecular orbitals show clear size dependence. While the HOMO level follows the expected behavior for quantum-confined electronic states, the LUMO energy shifts below the bulk conduction band minimum, which cannot be explained by a simple quantum confinement caused by the size effect. We show that this effect is a result of the interplay between quantum confinement and the formation of surface states due to partial and site-selective oxygen passivation.

摘要

了解纳米晶体(NCs)和量子受限系统中的能带边缘对于诸如水净化、有机化合物分解、水分解和太阳能电池等具有重要技术意义的应用中的能带对准至关重要。尽管块状碳化硅(SiC)的能带能量图已经被广泛研究了几十年,但对于其在SiC纳米晶体中的演化却知之甚少。此外,量子限制和表面化学之间的相互作用产生了不寻常的电子特性,并且仍然几乎不为人所理解。在这里,我们首次报告了合成的SiC纳米晶体的完整能带能量图,这些纳米晶体涵盖了从强量子限制到中等量子限制再到弱量子限制的范围。最高占据分子轨道(HOMO)和最低未占据分子轨道(LUMO)的绝对位置显示出明显的尺寸依赖性。虽然HOMO能级遵循量子受限电子态的预期行为,但LUMO能量移至块状导带最小值以下,这不能用由尺寸效应引起的简单量子限制来解释。我们表明,这种效应是量子限制与由于部分和位点选择性氧钝化导致的表面态形成之间相互作用的结果。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/24a8b4552257/jz9b03828_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/1a708fe01273/jz9b03828_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/38b3ccb36191/jz9b03828_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/548e3153c51b/jz9b03828_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/42cd7239fcd9/jz9b03828_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/24a8b4552257/jz9b03828_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/1a708fe01273/jz9b03828_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/38b3ccb36191/jz9b03828_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/548e3153c51b/jz9b03828_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/42cd7239fcd9/jz9b03828_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7e74/7145349/24a8b4552257/jz9b03828_0005.jpg

相似文献

1
Controlling the Energy-Level Alignment of Silicon Carbide Nanocrystals by Combining Surface Chemistry with Quantum Confinement.通过结合表面化学与量子限域来控制碳化硅纳米晶体的能级排列
J Phys Chem Lett. 2020 Mar 5;11(5):1721-1728. doi: 10.1021/acs.jpclett.9b03828. Epub 2020 Feb 18.
2
The surface termination effect on the quantum confinement and electron affinities of 3C-SiC quantum dots: a first-principles study.表面终端效应对 3C-SiC 量子点量子限制和电子亲和能的影响:第一性原理研究。
Nanoscale. 2012 Mar 7;4(5):1592-7. doi: 10.1039/c2nr12099b. Epub 2012 Jan 31.
3
Surface modification of chlorine-passivated silicon nanocrystals.氯钝化硅纳米晶的表面修饰。
Phys Chem Chem Phys. 2013 Feb 14;15(6):1815-20. doi: 10.1039/c2cp43763e. Epub 2013 Jan 4.
4
Size- and temperature-dependent quantum confined dielectric effect in colloidal pbse and CdSe nanocrystals.胶体PbSe和CdSe纳米晶体中尺寸和温度依赖性的量子限制介电效应
J Nanosci Nanotechnol. 2012 Aug;12(8):6224-30. doi: 10.1166/jnn.2012.6423.
5
Tuning Confinement in Colloidal Silicon Nanocrystals with Saturated Surface Ligands.用饱和表面配体调整胶体硅纳米晶体的限域
Nano Lett. 2018 May 9;18(5):3118-3124. doi: 10.1021/acs.nanolett.8b00680. Epub 2018 Apr 20.
6
Dominant luminescence is not due to quantum confinement in molecular-sized silicon carbide nanocrystals.主发光不是由于分子尺寸碳化硅纳米晶中的量子限制。
Nanoscale. 2015 Jul 7;7(25):10982-8. doi: 10.1039/c5nr01204j. Epub 2015 Jun 9.
7
Tunability Limit of Photoluminescence in Colloidal Silicon Nanocrystals.胶体硅纳米晶体中光致发光的可调谐极限
Sci Rep. 2015 Jul 22;5:12469. doi: 10.1038/srep12469.
8
Size-Dependence of Acceptor and Donor Levels of Boron and Phosphorus Codoped Colloidal Silicon Nanocrystals.硼磷共掺杂胶体硅纳米晶的受主和施主能级的尺寸依赖性。
Nano Lett. 2016 Apr 13;16(4):2615-20. doi: 10.1021/acs.nanolett.6b00225. Epub 2016 Mar 23.
9
Band alignment at organic-inorganic heterojunctions between P3HT and n-type 6H-SiC.聚 3-己基噻吩(P3HT)与 n 型 6H-碳化硅之间的有机-无机异质结能带排列。
ACS Appl Mater Interfaces. 2011 Nov;3(11):4286-91. doi: 10.1021/am200952s. Epub 2011 Oct 12.
10
Unexpected Electronic Features of NiO Quantum Dots Produced by Femtosecond Pulsed Laser Ablation in Water.飞秒脉冲激光在水中烧蚀制备的NiO量子点的意外电子特性
J Phys Chem Lett. 2024 Apr 18;15(15):4185-4190. doi: 10.1021/acs.jpclett.4c00458. Epub 2024 Apr 10.

引用本文的文献

1
Recent Advances in the Synthesis, Optical Properties, and Applications of Fluorescent Silicon Carbide Quantum Dots.荧光碳化硅量子点的合成、光学性质及应用的最新进展
Small Sci. 2025 Jun 28;5(8):2500013. doi: 10.1002/smsc.202500013. eCollection 2025 Aug.
2
Silicon Carbide Photonic Crystal Photoelectrode.碳化硅光子晶体光电极
Adv Sci (Weinh). 2025 May;12(20):e2415552. doi: 10.1002/advs.202415552. Epub 2025 Mar 17.
3
Formamidinium lead iodide perovskite photovoltaics with MoS quantum dots.含二硫化钼量子点的甲脒碘化铅钙钛矿光伏电池

本文引用的文献

1
Ultra-small photoluminescent silicon-carbide nanocrystals by atmospheric-pressure plasmas.通过常压等离子体制备超小发光碳化硅纳米晶体。
Nanoscale. 2016 Oct 6;8(39):17141-17149. doi: 10.1039/c6nr03702j.
2
Nonthermal Plasma Synthesis of Nanocrystals: Fundamental Principles, Materials, and Applications.非热等离子体法合成纳米晶:基本原理、材料与应用。
Chem Rev. 2016 Sep 28;116(18):11061-127. doi: 10.1021/acs.chemrev.6b00039. Epub 2016 Aug 23.
3
The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy--A chemical inert interface with significant band discontinuities.
Sci Rep. 2024 Sep 16;14(1):21613. doi: 10.1038/s41598-024-72037-3.
通过分子束外延制备的同型ZnO/SiC异质结——具有显著能带不连续性的化学惰性界面。
Sci Rep. 2016 Mar 15;6:23106. doi: 10.1038/srep23106.
4
Energy band diagram of device-grade silicon nanocrystals.器件级硅纳米晶体的能带图。
Nanoscale. 2016 Mar 28;8(12):6623-8. doi: 10.1039/c5nr07705b.
5
Charge Recombination Control for High Efficiency Quantum Dot Sensitized Solar Cells.用于高效量子点敏化太阳能电池的电荷复合控制
J Phys Chem Lett. 2016 Feb 4;7(3):406-17. doi: 10.1021/acs.jpclett.5b02153. Epub 2016 Jan 15.
6
The GW-Method for Quantum Chemistry Applications: Theory and Implementation.用于量子化学应用的GW方法:理论与实现
J Chem Theory Comput. 2013 Jan 8;9(1):232-46. doi: 10.1021/ct300648t. Epub 2012 Dec 3.
7
One-Electron Energies from the Two-Component GW Method.单电子能量的双组分 GW 方法。
J Chem Theory Comput. 2015 Mar 10;11(3):969-79. doi: 10.1021/ct501069b.
8
Improved performance and stability in quantum dot solar cells through band alignment engineering.通过能带对准工程提高量子点太阳能电池的性能和稳定性。
Nat Mater. 2014 Aug;13(8):796-801. doi: 10.1038/nmat3984. Epub 2014 May 25.
9
Quantum rod-sensitized solar cell: nanocrystal shape effect on the photovoltaic properties.量子点敏化太阳能电池:纳米晶形状对光伏性能的影响。
Nano Lett. 2012 Apr 11;12(4):2095-100. doi: 10.1021/nl300356e. Epub 2012 Apr 2.
10
The surface termination effect on the quantum confinement and electron affinities of 3C-SiC quantum dots: a first-principles study.表面终端效应对 3C-SiC 量子点量子限制和电子亲和能的影响:第一性原理研究。
Nanoscale. 2012 Mar 7;4(5):1592-7. doi: 10.1039/c2nr12099b. Epub 2012 Jan 31.