Macias-Montero M, Askari S, Mitra S, Rocks C, Ni C, Svrcek V, Connor P A, Maguire P, Irvine J T S, Mariotti D
Nanotechnology & Integrated Bio-Engineering Centre (NIBEC), University of Ulster, BT37 0QB, UK.
School of Chemistry, University of St Andrews, St Andrews, Fife, KY16 9ST, UK.
Nanoscale. 2016 Mar 28;8(12):6623-8. doi: 10.1039/c5nr07705b.
Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.
使用大气压等离子体技术合成了器件级硅纳米晶体（NCs）。这些硅纳米晶体尺寸小且明确，约为2.3纳米。该合成系统允许直接制备薄膜，从而能够进行一系列测量，并便于将这种材料应用于不同的器件中。对硅纳米晶体的化学稳定性进行了评估，结果表明由于氢表面终止作用，其具有相对长期的耐久性。采用了包括开尔文探针、紫外光电子能谱和莫特-肖特基分析在内的光学和电学表征技术来确定硅纳米晶体的能带图。
