一种用于制造直径小于20纳米的垂直纳米线阵列的新型硅锗干式选择性各向同性原子层蚀刻技术。
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm.
作者信息
Li Junjie, Li Yongliang, Zhou Na, Wang Guilei, Zhang Qingzhu, Du Anyan, Zhang Yongkui, Gao Jianfeng, Kong Zhenzhen, Lin Hongxiao, Xiang Jinjuan, Li Chen, Yin Xiaogen, Li Yangyang, Wang Xiaolei, Yang Hong, Ma Xueli, Han Jianghao, Zhang Jing, Hu Tairan, Yang Tao, Li Junfeng, Yin Huaxiang, Zhu Huilong, Wang Wenwu, Radamson Henry H
机构信息
Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.
Microelectronics Institute, University of Chinese Academy of Sciences, Beijing 100049, China.
出版信息
Materials (Basel). 2020 Feb 7;13(3):771. doi: 10.3390/ma13030771.
Semiconductor nanowires have great application prospects in field effect transistors and sensors. In this study, the process and challenges of manufacturing vertical SiGe/Si nanowire array by using the conventional lithography and novel dry atomic layer etching technology. The final results demonstrate that vertical nanowires with a diameter less than 20 nm can be obtained. The diameter of nanowires is adjustable with an accuracy error less than 0.3 nm. This technology provides a new way for advanced 3D transistors and sensors.
半导体纳米线在场效应晶体管和传感器方面具有巨大的应用前景。在本研究中，介绍了采用传统光刻和新型干法原子层蚀刻技术制造垂直SiGe/Si纳米线阵列的工艺及挑战。最终结果表明，可以获得直径小于20nm的垂直纳米线。纳米线的直径可调节，精度误差小于0.3nm。该技术为先进的3D晶体管和传感器提供了一种新方法。
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