Wu Hui, Jile Huge, Chen Zeqiang, Xu Danyang, Yi Zao, Chen Xifang, Chen Jian, Yao Weitang, Wu Pinghui, Yi Yougen
.Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
School of Science, Huzhou University, Huzhou 313000, China.
Micromachines (Basel). 2020 Feb 12;11(2):189. doi: 10.3390/mi11020189.
In this paper, ZnO@MoS core-shell heterojunction arrays were successfully prepared by the two-step hydrothermal method, and the growth mechanism was systematically studied. We found that the growth process of molybdenum disulfide (MoS) was sensitively dependent on the reaction temperature and time. Through an X-ray diffractometry (XRD) component test, we determined that we prepared a 2H phase MoS with a direct bandgap semiconductor of 1.2 eV. Then, the photoelectric properties of the samples were studied on the electrochemical workstation. The results show that the ZnO@MoS heterojunction acts as a photoanode, and the photocurrent reaches 2.566 mA under the conditions of 1000 W/m sunshine and 0.6 V bias. The i-t curve also illustrates the perfect cycle stability. Under the condition of illumination and external bias, the electrons flow to the conduction band of MoS and flow out through the external electrode of MoS. The holes migrate from the MoS to the zinc oxide (ZnO) valence band. It is transferred to the external circuit through the glass with fluorine-doped tin oxide (FTO) together with the holes on the ZnO valence band. The ZnO@MoS nanocomposite heterostructure provides a reference for the development of ultra-high-speed photoelectric switching devices, photodetector(PD) devices, and photoelectrocatalytic technologies.
在本文中，采用两步水热法成功制备了ZnO@MoS核壳异质结阵列，并对其生长机理进行了系统研究。我们发现二硫化钼（MoS）的生长过程对反应温度和时间敏感依赖。通过X射线衍射（XRD）成分测试，我们确定制备出了具有1.2 eV直接带隙半导体的2H相MoS。然后，在电化学工作站上研究了样品的光电性能。结果表明，ZnO@MoS异质结作为光阳极，在1000 W/m阳光和0.6 V偏压条件下光电流达到2.566 mA。i-t曲线也说明了其具有完美的循环稳定性。在光照和外部偏压条件下，电子流向MoS的导带并通过MoS的外部电极流出。空穴从MoS迁移到氧化锌（ZnO）价带。它与ZnO价带上的空穴一起通过掺氟氧化锡（FTO）玻璃转移到外部电路。ZnO@MoS纳米复合异质结构为超高速光电开关器件、光电探测器（PD）器件和光电催化技术的发展提供了参考。
