Matsuzawa Nobuyuki N, Arai Hideyuki, Sasago Masaru, Fujii Eiji, Goldberg Alexander, Mustard Thomas J, Kwak H Shaun, Giesen David J, Ranalli Fabio, Halls Mathew D
Engineering Division, Industrial Solutions Company, Panasonic Corp., 1006 Kadoma, Kadoma, Osaka 571-8506, Japan.
Schrödinger Inc., 10201 Wateridge Circle, Suite 220, San Diego, California 92121, United States.
J Phys Chem A. 2020 Mar 12;124(10):1981-1992. doi: 10.1021/acs.jpca.9b10998. Epub 2020 Mar 4.
Materials exhibiting higher mobilities than conventional organic semiconducting materials such as fullerenes and fused thiophenes are in high demand for applications in printed electronics. To discover new molecules in the heteroacene family that might show improved charge mobility, a massive theoretical screen of hole conducting properties of molecules was performed by using a cloud-computing environment. Over 7 000 000 structures of fused furans, thiophenes and selenophenes were generated and 250 000 structures were randomly selected to perform density functional theory (DFT) calculations of hole reorganization energies. The lowest hole reorganization energy calculated was 0.0548 eV for a fused thioacene having 8 aromatics rings. Hole mobilities of compounds with the lowest 130 reorganization energy were further processed by applying combined DFT and molecular dynamics (MD) methods. The highest mobility calculated was 1.02 and 9.65 cm/(V s) based on percolation and disorder theory, respectively, for compounds containing selenium atoms with 8 aromatic rings. These values are about 20 times higher than those for dinaphthothienothiophene (DNTT).
与诸如富勒烯和稠合噻吩等传统有机半导体材料相比,具有更高迁移率的材料在印刷电子应用中需求量很大。为了发现并五苯家族中可能具有改善的电荷迁移率的新分子,利用云计算环境对分子的空穴传导性质进行了大规模理论筛选。生成了超过700万个稠合呋喃、噻吩和硒吩结构,并随机选择了25万个结构来进行空穴重组能的密度泛函理论(DFT)计算。对于具有8个芳环的稠合硫代并五苯,计算得到的最低空穴重组能为0.0548 eV。通过应用DFT和分子动力学(MD)相结合的方法,对具有最低130个重组能的化合物的空穴迁移率进行了进一步处理。对于含有8个芳环的硒原子的化合物,基于渗流和无序理论计算得到的最高迁移率分别为1.02和9.65 cm/(V s)。这些值比二萘并噻吩并噻吩(DNTT)的值高约20倍。