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ds(5'-GGG-3') 和 ds(5'-G(8OG)G-3') 的单电子氧化及空穴分布的本质:密度泛函理论(DFT)研究。

One-electron oxidation of ds(5'-GGG-3') and ds(5'-G(8OG)G-3') and the nature of hole distribution: a density functional theory (DFT) study.

机构信息

Department of Chemistry, Oakland University, Rochester, Michigan 48309, USA.

出版信息

Phys Chem Chem Phys. 2020 Mar 7;22(9):5078-5089. doi: 10.1039/c9cp06244k. Epub 2020 Feb 19.

Abstract

Of particular interest in radiation-induced charge transfer processes in DNA is the extent of hole localization immediately after ionization and subsequent relaxation. To address this, we considered double stranded oligomers containing guanine (G) and 8-oxoguanine (8OG), i.e., ds(5'-GGG-3') and ds(5'-G8OGG-3') in B-DNA conformation. Using DFT, we calculated a variety of properties, viz., vertical and adiabatic ionization potentials, spin density distributions in oxidized stacks, solvent and solute reorganization energies and one-electron oxidation potential (E) in the aqueous phase. Calculations for the vertical state of the -GGG- cation radical showed that the spin was found mainly (67%) on the middle G. However, upon relaxation to the adiabatic -GGG- cation radical, the spin localized (96%) on the 5'-G, as observed in experiments. Hole localizations on the middle G and 3'-G were higher in energy by 0.5 kcal mol and 0.4 kcal mol, respectively, than that of 5'-G. In the -G8OGG- cation radical, the spin localized only on the 8OG in both vertical and adiabatic states. The calculated vertical ionization potentials of -GGG- and -G8OGG- stacks were found to be lower than that of the vertical ionization potential of a single G in DNA. The calculated E values of -GGG- and -G8OGG- stacks are 1.15 and 0.90 V, respectively, which owing to stacking effects are substantially lower than the corresponding experimental E values of their monomers (1.49 and 1.18 V, respectively). SOMO to HOMO level switching is observed in these oxidized stacks. Consequently, our calculations predict that local double oxidations in DNA will form triplet diradical states, which are especially significant for high LET radiations.

摘要

在 DNA 中的辐射诱导电荷转移过程中,特别感兴趣的是离化后和随后弛豫后空穴的局域化程度。为了解决这个问题,我们考虑了含有鸟嘌呤(G)和 8-氧鸟嘌呤(8OG)的双链寡聚物,即 B-DNA 构象中的 ds(5'-GGG-3')和 ds(5'-G8OGG-3')。使用 DFT,我们计算了各种性质,即垂直和绝热电离势、氧化堆叠中的自旋密度分布、溶剂和溶质重组能以及水相中一价氧化电势(E)。对于-GGG-正离子自由基的垂直态计算表明,自旋主要(67%)位于中间的 G 上。然而,在弛豫到绝热-GGG-正离子自由基时,自旋局域化(96%)在 5'-G 上,如实验中观察到的那样。中间 G 和 3'-G 上的空穴局域化比 5'-G 高 0.5 kcal mol 和 0.4 kcal mol。在-G8OGG-正离子自由基中,自旋仅在垂直和绝热态下局域在 8OG 上。-GGG-和-G8OGG-堆叠的垂直电离势被发现低于 DNA 中单个 G 的垂直电离势。-GGG-和-G8OGG-堆叠的计算 E 值分别为 1.15 和 0.90 V,由于堆积效应,它们大大低于其单体的相应实验 E 值(分别为 1.49 和 1.18 V)。在这些氧化堆叠中观察到最高占据轨道到最低未占据轨道能级的转换。因此,我们的计算预测 DNA 中的局部双重氧化将形成三重自由基态,这对于高 LET 辐射尤其重要。

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