范德华层状反铁磁金属中的高迁移率。
High mobility in a van der Waals layered antiferromagnetic metal.
作者信息
Lei Shiming, Lin Jingjing, Jia Yanyu, Gray Mason, Topp Andreas, Farahi Gelareh, Klemenz Sebastian, Gao Tong, Rodolakis Fanny, McChesney Jessica L, Ast Christian R, Yazdani Ali, Burch Kenneth S, Wu Sanfeng, Ong Nai Phuan, Schoop Leslie M
机构信息
Department of Chemistry, Princeton University, Princeton, NJ 08544, USA.
Department of Physics, Princeton University, Princeton, NJ 08544, USA.
出版信息
Sci Adv. 2020 Feb 7;6(6):eaay6407. doi: 10.1126/sciadv.aay6407. eCollection 2020 Feb.
Van der Waals (vdW) materials with magnetic order have been heavily pursued for fundamental physics as well as for device design. Despite the rapid advances, so far, they are mainly insulating or semiconducting, and none of them has a high electronic mobility-a property that is rare in layered vdW materials in general. The realization of a high-mobility vdW material that also exhibits magnetic order would open the possibility for novel magnetic twistronic or spintronic devices. Here, we report very high carrier mobility in the layered vdW antiferromagnet GdTe. The electron mobility is beyond 60,000 cm V s, which is the highest among all known layered magnetic materials, to the best of our knowledge. Among all known vdW materials, the mobility of bulk GdTe is comparable to that of black phosphorus. By mechanical exfoliation, we further demonstrate that GdTe can be exfoliated to ultrathin flakes of three monolayers.
具有磁序的范德华（vdW）材料在基础物理学以及器件设计方面一直备受关注。尽管取得了快速进展，但到目前为止，它们主要是绝缘或半导体材料，而且它们中没有一种具有高电子迁移率——这一特性在一般的层状vdW材料中很少见。实现一种同时具有磁序和高迁移率的vdW材料将为新型磁扭转电子学或自旋电子学器件开辟可能性。在此，我们报道了层状vdW反铁磁体GdTe中非常高的载流子迁移率。据我们所知，电子迁移率超过60000 cm² V⁻¹ s⁻¹，这在所有已知的层状磁性材料中是最高的。在所有已知的vdW材料中，块状GdTe的迁移率与黑磷相当。通过机械剥离，我们进一步证明GdTe可以被剥离成三个单层的超薄薄片。
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