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通过溶液法制备的柔性金属氧化物半导体器件

Flexible Metal Oxide Semiconductor Devices Made by Solution Methods.

作者信息

Jo Jeong-Wan, Kang Seung-Han, Heo Jae Sang, Kim Yong-Hoon, Park Sung Kyu

机构信息

School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06980, Republic of Korea.

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.

出版信息

Chemistry. 2020 Jul 27;26(42):9126-9156. doi: 10.1002/chem.202000090. Epub 2020 Jun 5.

DOI:10.1002/chem.202000090
PMID:32090384
Abstract

For the fabrication of next-generation flexible metal oxide devices, solution-based methods are considered as a promising approach because of their potential advantages, such as high-throughput, large-area scalability, low-cost processing, and easy control over the chemical composition. However, to obtain certain levels of electrical performance, a high process temperature is essential, which can significantly limit its application in flexible electronics. Therefore, this article discusses recent research conducted on developing low-temperature, solution-processed, flexible, metal oxide semiconductor devices, from a single thin-film transistor device to fully integrated circuits and systems. The main challenges of solution-processed metal oxide semiconductors are introduced. Recent advances in materials, processes, and semiconductor structures are then presented, followed by recent advances in electronic circuits and systems based on these semiconductors, including emerging flexible energy-harvesting devices for self-powered systems that integrate displays, sensors, data-storage units, and information processing functions.

摘要

对于下一代柔性金属氧化物器件的制造,基于溶液的方法因其潜在优势,如高通量、大面积可扩展性、低成本加工以及易于控制化学成分,而被视为一种很有前景的方法。然而,为了获得一定水平的电学性能,较高的工艺温度是必不可少的,这会严重限制其在柔性电子领域的应用。因此,本文讨论了近期在开发低温、溶液处理的柔性金属氧化物半导体器件方面所进行的研究,范围从单个薄膜晶体管器件到完全集成的电路和系统。介绍了溶液处理的金属氧化物半导体的主要挑战。接着阐述了材料、工艺和半导体结构方面的最新进展,随后是基于这些半导体的电子电路和系统的最新进展,包括用于自供电系统的新兴柔性能量收集器件,这些系统集成了显示器、传感器、数据存储单元和信息处理功能。

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