Kim Seongjae, Seo Juhyung, Choi Junhwan, Yoo Hocheon
Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam, Gyeonggi-do, 13120, Republic of Korea.
Center of Bio-Integrated Electronics, Northwestern University, Evanston, IL, 60208, USA.
Nanomicro Lett. 2022 Oct 7;14(1):201. doi: 10.1007/s40820-022-00942-1.
Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate a large number of transistor devices per unit area. This approach has emerged to accommodate the higher demand of data processing capability and to circumvent the scaling limitation. A huge number of research efforts have been attempted to demonstrate vertically stacked electronics in the last two decades. In this review, we revisit materials and devices for the vertically integrated electronics with an emphasis on the emerging semiconductor materials that can be processable by bottom-up fabrication methods, which are suitable for future flexible and wearable electronics. The vertically stacked integrated circuits are reviewed based on the semiconductor materials: organic semiconductors, carbon nanotubes, metal oxide semiconductors, and atomically thin two-dimensional materials including transition metal dichalcogenides. The features, device performance, and fabrication methods for 3D integration of the transistor based on each semiconductor are discussed. Moreover, we highlight recent advances that can be important milestones in the vertically integrated electronics including advanced integrated circuits, sensors, and display systems. There are remaining challenges to overcome; however, we believe that the vertical 3D integration based on emerging semiconductor materials and devices can be a promising strategy for future electronics.
垂直三维（3D）集成是一种极具吸引力的策略，可在单位面积内集成大量晶体管器件。这种方法的出现是为了满足对数据处理能力日益增长的需求，并规避缩放限制。在过去二十年中，人们进行了大量研究工作来展示垂直堆叠电子器件。在本综述中，我们重新审视垂直集成电子器件的材料和器件，重点关注可通过自下而上制造方法加工的新兴半导体材料，这些材料适用于未来的柔性和可穿戴电子器件。基于半导体材料对垂直堆叠集成电路进行了综述：有机半导体、碳纳米管、金属氧化物半导体以及包括过渡金属二卤化物在内的原子级薄二维材料。讨论了基于每种半导体的晶体管3D集成的特性、器件性能和制造方法。此外，我们强调了最近取得的进展，这些进展可能是垂直集成电子器件中的重要里程碑，包括先进集成电路、传感器和显示系统。仍有挑战需要克服；然而，我们相信基于新兴半导体材料和器件的垂直3D集成可能是未来电子器件的一种有前途的策略。
