Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors.

The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (V) and its origin were analyzed by understanding the roles of slow and fast traps in solution-processed oxide TFTs. To control the initial V of oxide TFTs, the indium oxide (InO) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor. The concentration of oxygen vacancies decreased as the Al doping concentration increased, causing a positive V shift in the InO TFTs. The V shift (∆V) caused by PBS increased exponentially when V was increased, and a distinct tendency was observed as the gate bias stress increased due to a high vertical electric field in the oxide dielectric. In addition, the recovery behavior was analyzed to reveal the influence of fast and slow traps on ∆V by PBS. Results revealed that the effect of the slow trap increased as the V moved in the positive direction; this occured because the main electron trap location moved away from the interface as the Fermi level approached the conduction band minimum. Understanding the correlation between V and PBS instability can contribute to optimizing the fabrication of oxide TFT-based circuits for electronic applications.