Zeng Mengqi, Liu Jinxin, Zhou Lu, Mendes Rafael G, Dong Yongqi, Zhang Min-Ye, Cui Zhi-Hao, Cai Zhonghou, Zhang Zhan, Zhu Daming, Yang Tieying, Li Xiaolong, Wang Jianqiang, Zhao Liang, Chen Guoxian, Jiang Hong, Rümmeli Mark H, Zhou Hua, Fu Lei
College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, China.
The Institute for Advanced Studies, Wuhan University, Wuhan, China.
Nat Mater. 2020 May;19(5):528-533. doi: 10.1038/s41563-020-0622-y. Epub 2020 Feb 24.
Developing a precise and reproducible bandgap tuning method that enables tailored design of materials is of crucial importance for optoelectronic devices. Towards this end, we report a sphere diameter engineering (SDE) technique to manipulate the bandgap of two-dimensional (2D) materials. A one-to-one correspondence with an ideal linear working curve is established between the bandgap of MoS and the sphere diameter in a continuous range as large as 360 meV. Fully uniform bandgap tuning of all the as-grown MoS crystals is realized due to the isotropic characteristic of the sphere. More intriguingly, both a decrease and an increase of the bandgap can be achieved by constructing a positive or negative curvature. By fusing individual spheres in the melted state, post-synthesis bandgap adjustment of the supported 2D materials can be realized. This SDE technique, showing good precision, uniformity and reproducibility with high efficiency, may further accelerate the potential applications of 2D materials.
开发一种精确且可重复的带隙调谐方法，以实现材料的定制设计，这对光电器件至关重要。为此，我们报告了一种球体直径工程（SDE）技术，用于调控二维（2D）材料的带隙。在连续高达360 meV的范围内，MoS的带隙与球体直径之间建立了与理想线性工作曲线的一一对应关系。由于球体的各向同性特性，实现了所有生长态MoS晶体的完全均匀带隙调谐。更有趣的是，通过构建正曲率或负曲率，既可以实现带隙的减小，也可以实现带隙的增加。通过在熔融状态下融合单个球体，可以实现对负载的二维材料进行合成后带隙调整。这种SDE技术具有良好的精度、均匀性和可重复性，且效率高，可能会进一步加速二维材料的潜在应用。
