Gao Qingguo, Chen Lvcheng, Chen Simin, Zhang Zhi, Yang Jianjun, Pan Xinjian, Yi Zichuan, Liu Liming, Chi Feng, Liu Ping, Zhang Chongfu
School of Electronic Information, University of Electronic Science and Technology of China, Zhongshan Institute, Zhongshan 528402, China.
School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Nanomaterials (Basel). 2022 Aug 24;12(17):2913. doi: 10.3390/nano12172913.
In recent years, two-dimensional molybdenum disulfide (MoS) has attracted extensive attention in the application field of next-generation electronics. Compared with single-layer MoS, bilayer MoS has higher carrier mobility and has more promising applications for future novel electronic devices. Nevertheless, the large-scale low-cost synthesis of high-quality bilayer MoS still has much room for exploration, requiring further research. In this study, bilayer MoS crystals grown on soda-lime glass substrate by sodium chloride (NaCl)-assisted chemical vapor deposition (CVD) were reported, the growth mechanism of NaCl in CVD of bilayer MoS was analyzed, and the effects of molybdenum trioxide (Mo) mass and growth pressure on the growth of bilayer MoS under the assistance of NaCl were further explored. Through characterization with an optical microscope, atomic force microscopy and Raman analyzer, the domain size of bilayer MoS prepared by NaCl-assisted CVD was shown to reach 214 μm, which is a 4.2X improvement of the domain size of bilayer MoS prepared without NaCl-assisted CVD. Moreover, the bilayer structure accounted for about 85%, which is a 2.1X improvement of bilayer MoS prepared without NaCl-assisted CVD. This study provides a meaningful method for the growth of high-quality bilayer MoS, and promotes the large-scale and low-cost applications of CVD MoS.
近年来,二维二硫化钼(MoS)在下一代电子应用领域引起了广泛关注。与单层MoS相比,双层MoS具有更高的载流子迁移率,在未来新型电子器件方面具有更广阔的应用前景。然而,高质量双层MoS的大规模低成本合成仍有很大的探索空间,需要进一步研究。本研究报道了通过氯化钠(NaCl)辅助化学气相沉积(CVD)在钠钙玻璃衬底上生长的双层MoS晶体,分析了NaCl在双层MoS CVD中的生长机制,并进一步探讨了三氧化钼(Mo)质量和生长压力对NaCl辅助下双层MoS生长的影响。通过光学显微镜、原子力显微镜和拉曼分析仪进行表征,结果表明,NaCl辅助CVD制备的双层MoS的畴尺寸达到214μm,相比无NaCl辅助CVD制备的双层MoS的畴尺寸提高了4.2倍。此外,双层结构占比约85%,相比无NaCl辅助CVD制备的双层MoS提高了2.1倍。本研究为高质量双层MoS的生长提供了一种有意义的方法,推动了CVD MoS的大规模低成本应用。