Cho Seong-Kun, Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul, 01897, Republic of Korea.
Sci Rep. 2020 Feb 27;10(1):3645. doi: 10.1038/s41598-020-60637-8.
In this study, we present a low thermal budget microwave annealing (MWA) method for calcination of electrospun In-Ga-ZnO (IGZO) nanofibres and demonstrate an improvement in the performance of IGZO nanofibre field-effect transistors (FETs) by Ar/O mixed-plasma surface treatment. The IGZO nanofibres were fabricated by electrospinning method and calcined using MWA method. This process allowed for a significant reduction in the heat treatment temperature and time. Subsequently, plasma surface treatment using various ratios of Ar/O gas mixtures was carried out. The surface morphology and chemical composition of MWA-calcined and plasma-treated IGZO nanofibres were studied by SEM and XPS analysis. In order to investigate the effects of MWA calcination combined with Ar/O mixed-plasma treatment on the electrical properties and the reliability of nanofibres-based transistors, IGZO nanofibres FETs were fabricated and applied to resistor-loaded inverters. Our results show that the O plasma treatment significantly improves the performance of IGZO nanofibres FETs and the resistor-loaded inverters based on IGZO nanofibres FETs, whereas Ar plasma treatment degrades the performance of these devices. The instability tests using positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS) revealed that the O plasma treatment contributed to the stability of IGZO nanofibres FETs. Our results suggest that the MWA calcination combined with the Ar/O mixed-plasma surface treatment is a promising technique for the fabrication of high performance IGZO nanofibres FETs with low thermal budget processes.
在本研究中，我们提出了一种用于煅烧电纺铟镓锌氧化物（IGZO）纳米纤维的低热预算微波退火（MWA）方法，并通过氩/氧混合等离子体表面处理证明了IGZO纳米纤维场效应晶体管（FET）性能的提升。通过静电纺丝法制备IGZO纳米纤维，并使用MWA方法进行煅烧。该工艺可显著降低热处理温度和时间。随后，使用不同比例的氩/氧气体混合物进行等离子体表面处理。通过扫描电子显微镜（SEM）和X射线光电子能谱（XPS）分析研究了MWA煅烧和等离子体处理后的IGZO纳米纤维的表面形貌和化学成分。为了研究MWA煅烧与氩/氧混合等离子体处理相结合对基于纳米纤维的晶体管的电学性能和可靠性的影响，制备了IGZO纳米纤维FET，并将其应用于电阻负载反相器。我们的结果表明，氧等离子体处理显著提高了IGZO纳米纤维FET以及基于IGZO纳米纤维FET的电阻负载反相器的性能，而氩等离子体处理则降低了这些器件的性能。使用正偏压温度应力（PBTS）和负偏压温度应力（NBTS）的稳定性测试表明，氧等离子体处理有助于提高IGZO纳米纤维FET的稳定性。我们的结果表明，MWA煅烧与氩/氧混合等离子体表面处理相结合是一种采用低热预算工艺制造高性能IGZO纳米纤维FET的有前途的技术。
