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用于高性能场效应晶体管的电纺铟镓锌氧化物纳米纤维的微波辅助煅烧

Microwave-assisted calcination of electrospun indium-gallium-zinc oxide nanofibers for high-performance field-effect transistors.

作者信息

Cho Seong-Kun, Cho Won-Ju

机构信息

Department of Electronic Materials Engineering, Kwangwoon University 20, Gwangun-ro, Nowon-gu Seoul 01897 Republic of Korea

出版信息

RSC Adv. 2020 Oct 19;10(63):38351-38356. doi: 10.1039/d0ra04963h. eCollection 2020 Oct 15.

DOI:10.1039/d0ra04963h
PMID:35517543
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9057279/
Abstract

The effects of microwave-assisted calcination of electrospun In-Ga-Zn-O (IGZO) nanofibers intended for electronic devices are unclear. To this end, a systematic study was conducted on the effects of microwave-assisted calcination on the microstructure and optical and mechanical properties of electrospun IGZO nanofibers used in high-performance field-effect transistors (FETs). To clarify the role of microwave annealing (MWA) on the characteristics of the electrospun nanofibers, calcination was carried out using two techniques: MWA and conventional thermal annealing (CTA). The morphological differences between IGZO nanofibers calcined using the two techniques were analyzed by scanning electron microscopy (SEM); the diameter of nanofibers was significantly reduced through MWA as compared to CTA. After calcination, the optical transmittance in the visible region was slightly improved, with the MWA-calcined nanofibers exhibiting a higher transmittance than the CTA-calcined nanofibers. Scratch test results showed that the calcination improved the adhesion strength of the nanofibers to the SiO substrate; MWA was more effective in improving the mechanical properties than CTA. Furthermore, the effects of MWA calcination on the electrical properties of FETs fabricated using the electrospun IGZO nanofibers were investigated. The MWA-calcined devices showed better electrical characteristics and reliability than the CTA-calcined devices for IGZO nanofiber FETs.

摘要

用于电子器件的静电纺铟镓锌氧化物（IGZO）纳米纤维经微波辅助煅烧后的效果尚不清楚。为此，针对微波辅助煅烧对用于高性能场效应晶体管（FET）的静电纺IGZO纳米纤维的微观结构、光学和机械性能的影响进行了系统研究。为阐明微波退火（MWA）对静电纺纳米纤维特性的作用，采用两种技术进行煅烧：MWA和传统热退火（CTA）。通过扫描电子显微镜（SEM）分析了用这两种技术煅烧的IGZO纳米纤维之间的形态差异；与CTA相比，通过MWA煅烧的纳米纤维直径显著减小。煅烧后，可见光区域的光学透过率略有提高，MWA煅烧的纳米纤维比CTA煅烧的纳米纤维具有更高的透过率。划痕测试结果表明，煅烧提高了纳米纤维与SiO衬底的粘附强度；MWA在改善机械性能方面比CTA更有效。此外，还研究了MWA煅烧对使用静电纺IGZO纳米纤维制造的FET电学性能的影响。对于IGZO纳米纤维FET，MWA煅烧器件比CTA煅烧器件表现出更好的电学特性和可靠性。

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