Park Ki-Woong, Cho Won-Ju
Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 139-701, Korea.
Polymers (Basel). 2022 Feb 8;14(3):651. doi: 10.3390/polym14030651.
A random network of indium-gallium-zinc oxide (IGZO) nanowires was fabricated by electrospun-polyvinylpyrrolidone (PVP)-nanofiber template transfer. Conventional electrospun nanofibers have been extensively studied owing to their flexibility and inherently high surface-to-volume ratio. However, solution-based IGZO nanofibers have critical issues such as poor electrical properties, reliability, and uniformity. Furthermore, high-temperature calcination, which is essential for vaporizing the polymer matrix, hinders their applications for flexible electronics. Therefore, sputter-based IGZO nanowires were obtained in this study using electrospun PVP nanofibers as an etching mask to overcome the limitations of conventional electrospun IGZO nanofibers. Field-effect transistors (FETs) were fabricated using two types of channels, that is, the nanofiber template-transferred IGZO nanowires and electrospun IGZO nanofibers. A comparison of the transmittance, adhesion, electrical properties, reliability, and uniformity of these two channels in operation revealed that the nanofiber template-transferred IGZO nanowire FETs demonstrated higher transmittance, stronger substrate adhesion, superior electrical performance, and operational reliability and uniformity compared to the electrospun IGZO nanofiber FETs. The proposed IGZO nanowires fabricated by PVP nanofiber template transfer are expected to be a promising channel structure that overcomes the limitations of conventional electrospun IGZO nanofibers.
通过静电纺丝聚乙烯吡咯烷酮（PVP）纳米纤维模板转移制备了铟镓锌氧化物（IGZO）纳米线的随机网络。传统的静电纺丝纳米纤维因其柔韧性和固有的高比表面积而受到广泛研究。然而，基于溶液的IGZO纳米纤维存在诸如电性能差、可靠性低和均匀性不佳等关键问题。此外，对于蒸发聚合物基质至关重要的高温煅烧阻碍了它们在柔性电子学中的应用。因此，本研究使用静电纺丝PVP纳米纤维作为蚀刻掩膜获得了基于溅射的IGZO纳米线，以克服传统静电纺丝IGZO纳米纤维的局限性。使用两种类型的沟道制造了场效应晶体管（FET），即纳米纤维模板转移的IGZO纳米线和静电纺丝IGZO纳米纤维。对这两种沟道在工作中的透射率、附着力、电性能、可靠性和均匀性进行比较后发现，与静电纺丝IGZO纳米纤维FET相比，纳米纤维模板转移的IGZO纳米线FET表现出更高的透射率、更强的基底附着力、更优异的电性能以及工作可靠性和均匀性。通过PVP纳米纤维模板转移制备的IGZO纳米线有望成为一种有前途的沟道结构，能够克服传统静电纺丝IGZO纳米纤维的局限性。
