Liu Xiao-Chen, Zhao Shuyang, Sun Xueping, Deng Liangzi, Zou Xiaolong, Hu Youcheng, Wang Yun-Xiao, Chu Ching-Wu, Li Jia, Wu Jingjie, Ke Fu-Sheng, Ajayan Pulickel M
Sauvage Center for Molecular Sciences, College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
Laboratory for Computational Materials Engineering, Division of Energy and Environment, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055, China.
Sci Adv. 2020 Feb 14;6(7):eaay4092. doi: 10.1126/sciadv.aay4092. eCollection 2020 Feb.
Intercalated transition metal dichalcogenides (TMDs) have attracted substantial interest due to their exciting electronic properties. Here, we report a unique approach where copper (Cu) atoms from bulk Cu solid intercalate spontaneously into van der Waals (vdW) gaps of group IV and V layered TMDs at room temperature and atmospheric pressure. This distinctive phenomenon is used to develop a strategy to synthesize Cu species-intercalated layered TMD compounds. A series of Cu-intercalated 2H-NbS compounds were obtained with homogeneous distribution of Cu intercalates in the form of monovalent Cu (I), occupying the tetrahedral sites coordinated by S atoms within the interlayer space of NbS. The Fermi level of NbS shifts up because of the intercalation of Cu, resulting in the improvement of electrical conductivity in the -direction. On the other hand, intercalation of Cu into vdW gaps of NbS systematically suppresses the superconducting transition temperature ( ) and superconducting volume fraction.
插层过渡金属二硫属化物(TMDs)因其令人兴奋的电子特性而引起了广泛关注。在此,我们报告了一种独特的方法,即在室温及大气压下,来自块状铜固体的铜(Cu)原子自发地插入IV族和V族层状TMDs的范德华(vdW)间隙中。这种独特的现象被用于开发一种合成铜物种插层的层状TMD化合物的策略。获得了一系列铜插层的2H-NbS化合物,其中铜插层以单价铜(I)的形式均匀分布,占据了NbS层间空间中由硫原子配位的四面体位置。由于铜的插入,NbS的费米能级上移,导致其在c方向的电导率提高。另一方面,将铜插入NbS的范德华间隙会系统地抑制超导转变温度(Tc)和超导体积分数。