Chong Su Kong, Lei Chao, Lee Seng Huat, Jaroszynski Jan, Mao Zhiqiang, MacDonald Allan H, Wang Kang L
Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA.
Department of Physics, The University of Texas at Austin, Austin, TX, 78712, USA.
Nat Commun. 2023 Aug 9;14(1):4805. doi: 10.1038/s41467-023-40383-x.
The intrinsic magnetic topological insulator, Mn(BiSb)Te, has been identified as a Weyl semimetal with a single pair of Weyl nodes in its spin-aligned strong-field configuration. A direct consequence of the Weyl state is the layer dependent Chern number, [Formula: see text]. Previous reports in MnBiTe thin films have shown higher [Formula: see text] states either by increasing the film thickness or controlling the chemical potential. A clear picture of the higher Chern states is still lacking as data interpretation is further complicated by the emergence of surface-band Landau levels under magnetic fields. Here, we report a tunable layer-dependent [Formula: see text] = 1 state with Sb substitution by performing a detailed analysis of the quantization states in Mn(BiSb)Te dual-gated devices-consistent with calculations of the bulk Weyl point separation in the doped thin films. The observed Hall quantization plateaus for our thicker Mn(BiSb)Te films under strong magnetic fields can be interpreted by a theory of surface and bulk spin-polarised Landau level spectra in thin film magnetic topological insulators.
本征磁性拓扑绝缘体Mn(BiSb)Te在其自旋对齐强场构型中被确定为具有一对Weyl节点的Weyl半金属。Weyl态的一个直接结果是与层相关的陈数,[公式:见正文]。先前关于MnBiTe薄膜的报道表明,通过增加薄膜厚度或控制化学势,可以实现更高的[公式:见正文]态。由于磁场下表面带Landau能级的出现使数据解释更加复杂,目前仍缺乏对更高陈数态的清晰认识。在此,我们通过对Mn(BiSb)Te双栅器件中的量子化态进行详细分析,报道了一种通过Sb替代实现的与层相关的可调谐[公式:见正文]=1态——这与掺杂薄膜中体Weyl点间距的计算结果一致。我们较厚的Mn(BiSb)Te薄膜在强磁场下观察到的霍尔量子化平台可以用薄膜磁性拓扑绝缘体中表面和体自旋极化Landau能级谱的理论来解释。