Ma Chun, Clark Sarah, Liu Zhixiong, Liang Liangliang, Firdaus Yuliar, Tao Ran, Han Ali, Liu Xiaogang, Li Lain-Jong, Anthopoulos Thomas D, Hersam Mark C, Wu Tom
King Abdullah University of Science and Technology (Kaust), Kaust Solar Center, Thuwal 23955-6900, Saudi Arabia.
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.
ACS Nano. 2020 Apr 28;14(4):3969-3979. doi: 10.1021/acsnano.9b07888. Epub 2020 Mar 26.
Benefiting from their extraordinary physical properties, methylammonium lead halide perovskites (PVKs) have attracted significant attention in optoelectronics. However, the PVK-based devices suffer from low carrier mobility and high operation voltage. Here, we utilize sorted semiconducting single-walled carbon nanotubes (95% s-SWCNTs) to enhance the performance of thin-film transistors (TFTs) based on the mixed-cation perovskite (MAFA)Pb(IBr), enabling mixed-dimensional solution-processed electronics with high mobility (32.25 cm/(V s)) and low voltage (∼3 V) operation. The resulting mixed-dimensional PVK/SWCNT TFTs possess ON/OFF ratios on the order of 10, enabling the fabrication of high-gain inverters.
受益于其非凡的物理特性,甲胺铅卤化物钙钛矿(PVKs)在光电子学领域引起了广泛关注。然而,基于PVK的器件存在载流子迁移率低和工作电压高的问题。在此,我们利用经过分类的半导体单壁碳纳米管(95% s-SWCNTs)来提高基于混合阳离子钙钛矿(MAFA)Pb(IBr)的薄膜晶体管(TFTs)的性能,实现具有高迁移率(32.25 cm/(V s))和低电压(约3 V)操作的混合维度溶液处理电子器件。由此产生的混合维度PVK/SWCNT TFTs的开/关比约为10,能够制造高增益逆变器。