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氧化钴在钒酸铋上的简便负载:用于高效光电化学水氧化的 p-n 结的证实构建

Facile loading of cobalt oxide on bismuth vanadate: Proved construction of p-n junction for efficient photoelectrochemical water oxidation.

作者信息

Huang Jingwei, Liu Tingting, Wang Rongfang, Zhang Mingyi, Wang Lei, She Houde, Wang Qizhao

机构信息

College of Chemistry and Chemical Engineering, Gansu International Scientific and Technological Cooperation Base of Water-Retention Chemical Functional Materials, Research Center of Gansu Military and Civilian Integration Advanced Structural Materials, Northwest Normal University, Lanzhou 730070, People's Republic of China.

College of Chemical Engineering, Qingdao University of Science and Technology, Qingdao 266042, People's Republic of China.

出版信息

J Colloid Interface Sci. 2020 Jun 15;570:89-98. doi: 10.1016/j.jcis.2020.02.109. Epub 2020 Feb 27.

Abstract

Cobalt oxide is an excellent water oxidation cocatalyst used in photoelectrochemical (PEC) water splitting field. Finding a facial way to load cobalt oxide on a semiconductor anode is important to effectively realize PEC water splitting on a large scale. In this work, a simple impregnation and calcination method is developed to fabricate CoO/BiVO anode. The constructed CoO/BiVO anode provides a photocurrent of 3.1 mA cm at 1.23 V vs. RHE, about 2.8 times that of BiVO anode (1.1 mA cm). Furthermore, both the charge separation and injection efficiency are improved by loading CoO nanoparticles onto the BiVO layer. Importantly, input voltage-output current characteristic curves are used for the first time to prove the formation of p-n junction between CoO and BiVO, which benefits to the separation of photogenerated holes and electrons. All results indicate that the impregnation and calcination method is efficacious for facile fabrication of CoO/BiVO photoanode with high performance.

摘要

氧化钴是一种用于光电化学(PEC)水分解领域的优异析氧共催化剂。找到一种简便的方法将氧化钴负载在半导体阳极上对于大规模有效实现PEC水分解至关重要。在这项工作中,开发了一种简单的浸渍和煅烧方法来制备CoO/BiVO阳极。构建的CoO/BiVO阳极在相对于可逆氢电极(RHE)为1.23 V时提供3.1 mA cm的光电流,约为BiVO阳极(1.1 mA cm)的2.8倍。此外,通过将CoO纳米颗粒负载到BiVO层上,电荷分离和注入效率都得到了提高。重要的是,首次使用输入电压-输出电流特性曲线来证明CoO和BiVO之间形成了p-n结,这有利于光生空穴和电子的分离。所有结果表明,浸渍和煅烧方法对于简便制备高性能的CoO/BiVO光阳极是有效的。

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