采用脉冲加热技术同时测量热容、电阻率和半球总发射率：钒，1500至2100K
Simultaneous Measurements of Heat Capacity, Electrical Resistivity, and Hemispherical Total Emittance by a Pulse Heating Technique: Vanadium, 1500 to 2100 K.
作者信息
Cezairliyan A, Righini F, McClure J L
机构信息
Institute for Materials Research, National Bureau of Standards, Washington, D.C. 20234.
出版信息
J Res Natl Bur Stand A Phys Chem. 1974 Mar-Apr;78A(2):143-147. doi: 10.6028/jres.078A.010.
Simultaneous measurements of heat capacity, electrical resistivity, and hemispherical total emittance of vanadium in the temperature range 1500 to 2100 K by a subsecond duration, pulse heating technique are described. The results are expressed by the relations: = 56.34 - 3.839 × 10 + 1.563 × 10 = 8.794 + 6.282 × 10 - 6.804 × 10 where is in J · mol · K, is in 10 Ω · m, and is in K. The values for the hemispherical total emittance are: 0.313 at 1900 K and 0.332 at 2000 K. Estimated inaccuracies of the measured properties are: 3 percent for heat capacity, 0.5 percent for electrical resistivity and 5 percent for hemispherical total emittance.
描述了通过亚秒级持续时间的脉冲加热技术，在1500至2100K温度范围内同时测量钒的热容量、电阻率和半球总发射率。结果由以下关系式表示： = 56.34 - 3.839 × 10 + 1.563 × 10 = 8.794 + 6.282 × 10 - 6.804 × 10 其中 单位为J·mol·K， 单位为10 Ω·m， 单位为K。半球总发射率的值为：1900K时为0.313，2000K时为0.332。所测性能的估计误差为：热容量为3%，电阻率为0.5%，半球总发射率为5%。
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