Cezairliyan A, McClure J L
Institute for Materials Research, National Bureau of Standards, Washington, D.C. 20234.
J Res Natl Bur Stand A Phys Chem. 1971 Jul-Aug;75A(4):283-290. doi: 10.6028/jres.075A.027.
Measurements of heat capacity, electrical resistivity, hemispherical total emittance, and normal spectral emittance of tungsten above 2000 K by a pulse heating technique are described. Duration of an individual experiment, in which the specimen is heated from room temperature to near its melting point, is less than one second. Temperature measurements are made with a photoelectric pyrometer. Experimental quantities are recorded with a digital data acquisition system, which has a full-scale signal resolution of one part in 8000. Time resolution of the entire system is 0.4 ms. Results on the above properties of tungsten in the range 2000 to 3600 K are reported and are compared with those in the literature. Estimated inaccuracy of measured properties in the above temperature range is: 2 to 3 percent for heat capacity, 1 percent for electrical resistivity, 3 percent for hemispherical total and normal spectral emittances.
描述了通过脉冲加热技术对2000K以上钨的热容、电阻率、半球总发射率和法向光谱发射率进行的测量。在单个实验中，将试样从室温加热到接近其熔点，实验持续时间不到一秒。用光电高温计进行温度测量。实验数据用数字数据采集系统记录，该系统的满量程信号分辨率为8000分之一。整个系统的时间分辨率为0.4毫秒。报告了2000至3600K范围内钨上述性能的结果，并与文献中的结果进行了比较。上述温度范围内测量性能的估计误差为：热容2%至3%，电阻率1%，半球总发射率和法向光谱发射率3%。
