Liu Jia, Zhang Yongsheng, Fan Zhiqiang, Sun Hui, Shan Feng
Department of mathematics and Physics, Luoyang Institute of Science and Technology, Luoyang 471023, People's Republic of China.
Nanotechnology. 2020 Apr 17;31(27):275705. doi: 10.1088/1361-6528/ab8421. Epub 2020 Mar 27.
Hydrogen-argon mixed dilution has been applied for the deposition of boron-doped nanocrystalline silicon carbide (nc-SiC) thin films. The variations of structural, compositional, electrical and optical properties with the varying H/Ar ratio are systemically investigated through various characterizations. It is shown that by using H-Ar mixed dilution for deposition, B-doped nc-SiC thin film possessing both wide optical band gap (∼2.22 eV) and high conductivity (∼1.9 S cm) can be obtained at the H/Ar flow ratio of 360/140. In addition, the B-doped nc-SiC thin films are fabricated as the window layers of a-Si thin film solar cells, and the highest conversion efficiency (8.13%) is obtained when applying the window layer with the largest optical band gap energy.
氢氩混合稀释已应用于硼掺杂纳米晶硅碳化硅（nc-SiC）薄膜的沉积。通过各种表征系统地研究了结构、成分、电学和光学性质随H/Ar比变化的情况。结果表明，通过使用H-Ar混合稀释进行沉积，在H/Ar流量比为360/140时，可以获得具有宽光学带隙（约2.22 eV）和高电导率（约1.9 S cm）的硼掺杂nc-SiC薄膜。此外，将硼掺杂nc-SiC薄膜制成非晶硅薄膜太阳能电池的窗口层，当应用具有最大光学带隙能量的窗口层时，可获得最高转换效率（8.13%）。
