Wei Wen-Qi, Zhang Jie-Yin, Wang Jian-Huan, Cong Hui, Guo Jing-Jing, Wang Zi-Hao, Xu Hong-Xing, Wang Ting, Zhang Jian-Jun
Opt Lett. 2020 Apr 1;45(7):2042-2045. doi: 10.1364/OL.389191.
III-V semiconductor lasers epitaxially grown on silicon, especially on a silicon-on-insulator (SOI) platform, have been considered one of the most promising approaches to realize an integrated light source for silicon photonics. Although notable achievements have been reported on InP-based 1.5 µm III-V semiconductor lasers directly grown on silicon substrates, phosphorus-free 1.5 µm InAs quantum dot (QD) lasers on both silicon and SOI platforms are still uncharted territory. In this work, we demonstrate, to the best of our knowledge, the first phosphorus-free InAs QD microdisk laser epitaxially grown on SOI substrate emitting at the telecommunications S-band by growing metamorphic InAs/InGaAs QDs on (111)-faceted SOI hollow structures. The lasing threshold power for a seven-layer InAs QD microdisk laser with a diameter of 4 µm is measured as 234 μW at 200 K. For comparison, identical microdisk lasers grown on GaAs substrate are also characterized. The results obtained pave the way for an on-chip 1.5 µm light source for long-haul telecommunications.
在硅上，特别是在绝缘体上硅（SOI）平台上外延生长的III-V族半导体激光器，被认为是实现硅光子学集成光源最有前景的方法之一。尽管在直接生长在硅衬底上的基于InP的1.5μm III-V族半导体激光器方面已经报道了显著的成果，但在硅和SOI平台上的无磷1.5μm InAs量子点（QD）激光器仍然是未知领域。在这项工作中，据我们所知，通过在（111）面的SOI空心结构上生长变质InAs/InGaAs量子点，首次展示了在SOI衬底上外延生长的在电信S波段发射的无磷InAs量子点微盘激光器。在200K下，直径为4μm的七层InAs量子点微盘激光器的激射阈值功率测量为234μW。为了进行比较，还对生长在GaAs衬底上的相同微盘激光器进行了表征。所获得的结果为用于长距离电信的片上1.5μm光源铺平了道路。
